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2SA1242

SiliconPNPPowerTransistor

DESCRIPTION ·hFE=100-320(IC=-0.5A;VCE=-2V) ·hFE=70(Min)(IC=-4A;VCE=-2V) ·LowCollector-EmitterSaturationVoltage- :VCE(sat)=-1.0V(Max)(IC=-4A;IB=-0.1A) ··HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ APPLICATIONS ·Formediumpoweramplifierandstrobeflashapplicati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SA1242

SiliconPNPPowerTransistor

DESCRIPTION ·hFE=100-320(IC=-0.5A;VCE=-2V) ·hFE=70(Min)(IC=-4A;VCE=-2V) ·LowCollector-EmitterSaturationVoltage- :VCE(sat)=-1.0V(Max)(IC=-4A;IB=-0.1A) ··HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ APPLICATIONS ·Formediumpoweramplifierandstrobeflashapplicati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SA1242

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SA1242

TO-251-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●StrobeFlashApplicationsMediumPowerAmplifierApplications ●ExcellenthFELinearity :hFE(1)=100to320(VCE=?2V,IC=?0.5A) :hFE(2)=70(min)(VCE=?2V,IC=?4A) ●LowCollectorSaturationVoltage :VCE(sat)=?1.0V(max)(IC=?

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

2SA1242

iscSiliconPNPPowerTransistor

DESCRIPTION ?hFE=100-320(IC=-0.5A;VCE=-2V) ?hFE=70(Min)(IC=-4A;VCE=-2V) ?LowCollector-EmitterSaturationVoltage-:VCE(sat)=-1.0V(Max)(IC=-4A;IB=-0.1A) ?·HighPowerDissipation-:PC=10W@TC=25℃,PC=10W@Ta=25℃ ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceand

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SA1242

SiliconPNPEpitaxialType

FEATURES ●ExcellenthFElinearity. ●Lowcollectorsaturationvoltage. ●Highpowerdissipation. APPLICATIONS ●StrobeFlashApplications. ●MediumPowerAmplifierApplications.

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀微電子股份有限公司

2SA1242

SiliconPNPtransistorinaTO-252PlasticPackage.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features ExcellenthFElinearity,lowVCE(sat),highPC. Applications Strobeflashapplications,mediumpoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

2SA1242

StrobeFlashApplicationsMediumPowerAmplifierApplications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SA1242

StrobeFlashApplicationsMediumPowerAmplifierApplications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SA1242

TRANSISOTOR(STROBEFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS)

StrobeFlashApplications MediumPowerAmplifierApplications ?ExcellenthFElinearity :hFE(1)=100to320(VCE=?2V,IC=?0.5A) :hFE(2)=70(min)(VCE=?2V,IC=?4A) ?Lowcollectorsaturationvoltage :VCE(sat)=?1.0V(max)(IC=?4A,IB=?0.1A) ?Highpow

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

詳細參數

  • 型號：

    2SA1242-Y(LB)

  • 制造商：

    Toshiba

  • 功能描述：

    PNP Cut Tape

供應商型號品牌批號封裝庫存備注價格
NEC
24+
30000
詢價
TOSHIBA
11+
166
原裝正品現貨庫存價優(yōu)
 詢價
TOS
24+
TO-251
5000
全現原裝公司現貨
 詢價
TOS
22+23+
TO-251
27057
絕對原裝正品全新進口深圳現貨
 詢價
TOSHIBA/東芝
23+
TO-251
30000
全新原裝現貨,價格優(yōu)勢
 詢價
TOSHIBA
21+
TO-251
22400
原裝現貨假一賠十
 詢價
TOSHIBA
23+
3000
原裝正品假一罰百!可開增票!
 詢價
TOSHIBA/東芝
23+
TO-251
50000
全新原裝正品現貨,支持訂貨
 詢價
TOSHIBA/東芝
2022
TO-251
80000
原裝現貨,OEM渠道,歡迎咨詢
 詢價
TOSHIBA/東芝
TO-251
22+
6000
十年配單,只做原裝
 詢價
更多2SA1242-Y(LB)供應商 更新時間2025-1-16 16:30:00

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