日木欧美一区二区,亚洲精品视频在线播放,亚洲免费在线观看一区二区

首頁 >2SA196>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
2SA1960	文件：29.38 Kbytes Page：7 Pages	Silicon NPN Epitaxial Features ?Highvoltagelargecurrentoperation. VCEO=–80V,IC=–300mA ?HighfT. fT=1.3GHz ?Smalloutputcapacitance. Cob=2.9pF Application ?WidebandvideooutputamplifierforcolorCRTmonitor. ?Highfrequencyhighvoltageamplifier. ?Highspeedpowerswitchin	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SA1961	文件：37.2 Kbytes Page：2 Pages	Silicon PNP epitaxial planer type SiliconPNPepitaxialplanertype Forgeneralamplification Complementaryto2SC5419 ■Features ●HighcollectortoemittervoltageVCEO.	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
2SA1962	文件：150.14 Kbytes Page：2 Pages	TRANSISTOR (POWER AMPLIFIER APPLICATIONS) PowerAmplifierApplications ?Highbreakdownvoltage:VCEO=?230V(min) ?Complementaryto2SC5242 ?Recommendedfor80-Whigh-fidelityaudiofrequencyamplifier outputstage.	TOSHIBAToshiba Semiconductor 東芝株式會社東芝	TOSHIBA
2SA1962	文件：206.12 Kbytes Page：6 Pages	PNP Epitaxial Silicon Transistor Features ?HighCurrentCapability:IC=-17A ?HighPowerDissipation:130watts ?HighFrequency:30MHz. ?HighVoltage:VCEO=-250V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SC5242/FJA4313. ?ThermalandelectricalSpicemodelsarea	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
2SA1962	文件：110.31 Kbytes Page：2 Pages	isc Silicon PNP Power Transistor DESCRIPTION ?Collector-EmitterBreakdownVoltage- :V(BR)CEO=-230V(Min) ?GoodLinearityofhFE ?ComplementtoType2SC5242 APPLICATIONS ?Poweramplifierapplications ?Recommendfor80Whighfidelityaudiofrequency amplifieroutputstageapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
2SA1962	文件：175.08 Kbytes Page：4 Pages	Silicon PNP Power Transistors DESCRIPTION ?WithTO-3P(I)package ?Complementtotype2SC5242 ?Highcollectorvoltage:VCEO=-230V(Min) APPLICATIONS ?Poweramplifierapplications ?Recommendfor80Whighfidelityaudio frequencyamplifieroutputstage	SAVANTIC Savantic, Inc.	SAVANTIC
2SA1962	文件：237.28 Kbytes Page：4 Pages	Silicon PNP Power Transistors DESCRIPTION ?WithTO-3P(I)package ?Complementtotype2SC5242 ?Highcollectorvoltage:VCEO=-230V(Min) APPLICATIONS ?Poweramplifierapplications ?Recommendfor80Whighfidelityaudio frequencyamplifieroutputstage	JMNICQuanzhou Jinmei Electronic Co.,Ltd. 錦美電子泉州錦美電子有限公司	JMNIC
2SA1962	文件：484.8 Kbytes Page：8 Pages	PNP Epitaxial Silicon Transistor Features ?HighCurrentCapability:IC=-17A ?HighPowerDissipation:130watts ?HighFrequency:30MHz. ?HighVoltage:VCEO=-250V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SC5242/FJA4313. ?ThermalandelectricalSpicemodelsare	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
2SA1962	文件：146.86 Kbytes Page：4 Pages	Power Amplifier Applications PowerAmplifierApplications ?Highbreakdownvoltage:VCEO=?230V(min) ?Complementaryto2SC5242 ?Recommendedfor80-Whigh-fidelityaudiofrequencyamplifier outputstage.	TOSHIBAToshiba Semiconductor 東芝株式會社東芝	TOSHIBA
2SA1962	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 東芝株式會社東芝	TOSHIBA
2SA1962	文件：76.48 Kbytes Page：2 Pages	Silicon PNP Power Transistor DESCRIPTION ?Collector-EmitterBreakdownVoltage- :V(BR)CEO=-230V(Min) ?GoodLinearityofhFE ?ComplementtoType2SC5242 APPLICATIONS ?Poweramplifierapplications ?Recommendfor80Whighfidelityaudiofrequency amplifieroutputstageapplications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
2SA1962-O	文件：146.86 Kbytes Page：4 Pages	Power Amplifier Applications PowerAmplifierApplications ?Highbreakdownvoltage:VCEO=?230V(min) ?Complementaryto2SC5242 ?Recommendedfor80-Whigh-fidelityaudiofrequencyamplifier outputstage.	TOSHIBAToshiba Semiconductor 東芝株式會社東芝	TOSHIBA
2SA1962OTU	文件：206.12 Kbytes Page：6 Pages	PNP Epitaxial Silicon Transistor Features ?HighCurrentCapability:IC=-17A ?HighPowerDissipation:130watts ?HighFrequency:30MHz. ?HighVoltage:VCEO=-250V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SC5242/FJA4313. ?ThermalandelectricalSpicemodelsarea	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
2SA1962OTU	文件：484.8 Kbytes Page：8 Pages	PNP Epitaxial Silicon Transistor Features ?HighCurrentCapability:IC=-17A ?HighPowerDissipation:130watts ?HighFrequency:30MHz. ?HighVoltage:VCEO=-250V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SC5242/FJA4313. ?ThermalandelectricalSpicemodelsare	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
2SA1962RTU	文件：206.12 Kbytes Page：6 Pages	PNP Epitaxial Silicon Transistor Features ?HighCurrentCapability:IC=-17A ?HighPowerDissipation:130watts ?HighFrequency:30MHz. ?HighVoltage:VCEO=-250V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SC5242/FJA4313. ?ThermalandelectricalSpicemodelsarea	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
2SA1962RTU	文件：484.8 Kbytes Page：8 Pages	PNP Epitaxial Silicon Transistor Features ?HighCurrentCapability:IC=-17A ?HighPowerDissipation:130watts ?HighFrequency:30MHz. ?HighVoltage:VCEO=-250V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SC5242/FJA4313. ?ThermalandelectricalSpicemodelsare	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
2SA1963	文件：129.52 Kbytes Page：5 Pages	High-Frequency Low-Noise Amp, Ultrahigh-Speed Switching Applications High-FrequecyLow-NoiseAmplifier,Ultrahigh-SpeedSwitchingApplications Features ·Lownoise:NF=1.5dBtyp(f=1GHz). ·Highgain:\|S2le\|2=9dBtyp(f=1GHz). ·Highcutofffrequency:fT=5GHztyp.	SANYOSanyo Semicon Device 三洋三洋電機株式會社	SANYO
2SA1964	文件：38.36 Kbytes Page：1 Pages	For audio amplifier output stages/TV velocity modulation (-160V, -1.5A) Features 1)FlatDCcurrentgaincharacteristics. 2)Highbreakdownvoltage. 3)Highft.(Typ.150MHz) 4)WideSOA(safeoperatingarea) 5)Complementsthe2SC5248.	ROHMRohm 羅姆羅姆半導(dǎo)體集團	ROHM
2SA1964	文件：74.23 Kbytes Page：2 Pages	Silicon PNP Power Transistor DESCRIPTION ?Collector-EmitterBreakdownVoltage- :V(BR)CEo=-160V(Min) ?GoodLinearityofhFE ?WideAreaofSafeOperation ?ComplementtoType2SC5248 APPLICATIONS ?Poweramplifierapplications. ?Driverstageamplifierapplications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
2SA1964	文件：792.14 Kbytes Page：6 Pages	Silicon PNP transistor in a TO-220F Plastic Package. Descriptions SiliconPNPtransistorinaTO-220FPlasticPackage. Features FlatDCcurrentgaincharacteristics,highbreakdownvoltage, highfT,wideSOA,complementsthe2SC5248. Applications High-voltageswitching (audiooutputamplifiertransistor,stabilizedpowersupplytr	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍箭電子佛山市藍箭電子股份有限公司	FOSHAN

12 >>>

晶體管資料

型號：
2SA1961
別名：
三極管、晶體管、晶體三極管
生產(chǎn)廠家：
制作材料：
Si-PNP
性質(zhì)：
射頻/高頻放大（HF）_視頻輸出（Vid）
封裝形式：
直插封裝
極限工作電壓：
200V
最大電流允許值：
0.07A
最大工作頻率：
30MHZ
引腳數(shù)：
3
可代換的型號：
BF423A,BF436,BF437,2SB1349,
最大耗散功率：
1W
放大倍數(shù)：
圖片代號：
A-68
vtest：
200
htest：
30000000
atest：
0.07
wtest：
1

詳細參數(shù)

型號：
2SA196
制造商：
Panasonic Industrial Company
功能描述：
TRANSISTOR

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市億智騰科技有限公司	2SA1961	松下	24+	TO-92	6430	原裝現(xiàn)貨/歡迎來電咨詢	詢價
深圳市一線半導(dǎo)體有限公司	2SA19610	PANASIONIC	24+		7000		詢價
貿(mào)澤芯城（深圳）電子科技有限公司	2SA19610Q	MAT-松下	23+	ATV	5000	原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳	詢價
深圳市旺財半導(dǎo)體有限公司	2SA1961Q	MAT-松下	23+		2800	正品原裝貨價格低qq:2987726803	詢價
深圳市勤思達科技有限公司	2SA1962	TOSHIBA	15+	TO-247	11560	全新原裝,現(xiàn)貨庫存,長期供應(yīng)	詢價
齊創(chuàng)科技(上海,北京,青島)有限公司	2SA1962	TOSHIBA	23+	TO-3P	5000	原裝正品,假一罰十	詢價
深圳市博浩通科技有限公司	2SA1962	TOSHIBA	23+	TO-247	3000	全新原裝	詢價
深圳市卓越微芯電子有限公司	2SA1962	KEC	2020+	TO-3P	26	百分百原裝正品真實公司現(xiàn)貨庫存本公司只做原裝可	詢價
深圳市永貝爾科技有限公司	2SA1962	FAIRCHILD	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳宇航軍工半導(dǎo)體有限公司	2SA1962	TOSHIBA	19+	TO-3P(N)	59144	原廠代理渠道,每一顆芯片都可追溯原廠；	詢價

更多2SA196供應(yīng)商更新時間2024-12-26 8:58:00

晶體管資料

詳細參數(shù)

相關(guān)規(guī)格書

相關(guān)庫存