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2SB1180

Silicon PNP epitaxial planar type darlington

SiliconPNPepitaxialplanartypedarlington Formedium-speedvoltageswitching Complementaryto2SD1750,2SD1750A ■Features ?HighforwardcurrenttransferratiohFE ?Itypepackageenablingdirectsolderingoftheradiatingfintotheprintedcircuitboard,etc.ofsmallelectronicequipm

PanasonicPanasonic Corporation

松下松下電器

2SB1180A

Silicon PNP epitaxial planar type darlington

SiliconPNPepitaxialplanartypedarlington Formedium-speedvoltageswitching Complementaryto2SD1750,2SD1750A ■Features ?HighforwardcurrenttransferratiohFE ?Itypepackageenablingdirectsolderingoftheradiatingfintotheprintedcircuitboard,etc.ofsmallelectronicequipm

PanasonicPanasonic Corporation

松下松下電器

2SB1181

Power Transistor

Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=?80V,IC=?1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1181

Power Transistor (??0V, ??A)

Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=?80V,IC=?1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1181

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-80V(Min) ·DCCurrentGain- :hFE=120(Min)@IC=-0.1A APPLICATIONS ·Inverters ·MotorControls

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SB1182

Medium power Transistor(-32V, -2A)

●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M. ●Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1182

MEDIUM POWER TRANSISTOR(-32V, -2A)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1182

Medium Power Transistor (32V, 2A)

FTR?FTL Lowprofileflat-packageforlimitedspeceapplications. Tapetypecanbeusedonautomatedline.Bulktypeisalsoavailable.

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1182

Medium Power Transistor

■Features ●LowVCE(sat).VCE(sat)=-0.5V ●Complementaryto2SD1758

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SB1182

PNP PLASTIC ENCAPSULATE TRANSISTORS

PNPPLASTICENCAPSULATETRANSISTORS PbLead(Pb)-Free

WEITRON

Weitron Technology

2SB1182

Medium power transistor (-32V, -2A)

●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M. ●Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1182

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowVCE(sat),complementsthe2SD1758. Applications Mediumpoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

2SB1182

Medium power transistor (-32V, -2A)

●Features 1)LowVCE(sat). VCE(sat)=?0.5V(Typ.) (IC/IB=?2A/?0.2A) 2)Complementsthe2SD1766/2SD1758/2SD1862. ●Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1182

isc Silicon PNP Power Transistor

DESCRIPTION ?Smallandslimpackage ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Powerdissipation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SB1182

Medium power transistor (32V, 2A)

Mediumpowertransistor(?32V,?2A) Features 1)LowVCE(sat). VCE(sat)=?0.5V(Typ.) (IC/IB=?2A/?0.2A) 2)Complementsthe2SD1766/2SD1758/2SD1862 Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1182

Medium Power Transistor

FEATURES ●LowVCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) ●Complementsthe2SD1758 APPLICATIONS ●Epitaxialplanartype. ●PNPsilicontransistor.

BILINGalaxy Semi-Conductor Holdings Limited

世紀(jì)微電子常州銀河世紀(jì)微電子股份有限公司

2SB1182

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION TheUTC2SB1182isamediumpowerlowvoltagetransistor,designedforaudiopoweramplifier,DC-DCconverterandvoltageregulator. FEATURES *Highcurrentoutputupto3A *Lowsaturationvoltage

UTCUnisonic Technologies

友順友順科技股份有限公司

2SB1182

Medium power transistor (32V,2A)

Features 1)LowVCE(sat). VCE(sat)=?0.5V(Typ.) (IC/IB=?2A/?0.2A) 2)Complements2SD1758/2SD1862.

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1182

Medium power transistor (32V, 2A)

Mediumpowertransistor(?32V,?2A) Features 1)LowVCE(sat). VCE(sat)=?0.5V(Typ.) (IC/IB=?2A/?0.2A) 2)Complementsthe2SD1766/2SD1758/2SD1862 Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1182

TO-252-2L(4R) Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES PowerDissipation

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    2SB118

  • 制造商:

    PANASONIC

  • 制造商全稱:

    Panasonic Semiconductor

  • 功能描述:

    Silicon PNP epitaxial planar type darlington

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
PANASONIC
24+
SOT252
18000
詢價(jià)
ROHM
2016+
TO252
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價(jià)
ROHM
06+
TO252
400
原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量大可以發(fā)貨
詢價(jià)
ROHM
2339+
TO252
4231
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!
詢價(jià)
ROHM
23+
TO-252
5000
原裝正品,假一罰十
詢價(jià)
ROHM
23+
SOT252
9280
價(jià)格優(yōu)勢(shì)、原裝現(xiàn)貨、客戶至上。歡迎廣大客戶來電查詢
詢價(jià)
KEXIN
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
SMD
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價(jià)
ROHM
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
詢價(jià)
ROHM
23+
SOT-252
63000
原裝正品現(xiàn)貨
詢價(jià)
更多2SB118供應(yīng)商 更新時(shí)間2024-11-16 16:30:00