零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
2SB906 | TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) AudioFrequencyPowerAmplifierApplication ?Lowcollectorsaturationvoltage:VCE(sat)=?1.0V(typ.)(IC=?3A,IB=?0.3A) ?Highpowerdissipation:PC=20W(Tc=25°C) ?Complementaryto2SD1221 | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | |
2SB906 | Silicon PNP Epitaxial ■Features ●Lowcollectorsaturationvoltage ●Highpowerdissipation:PC=20W(Tc=25°C) ●Complementaryto2SD1221 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | |
2SB906 | Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | |
2SB906 | Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-60V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=-0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
2SB906 | Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-60V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=-0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
2SB906 | Audio Frequency Power Amplifier Application | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | |
2SB906 | Audio Frequency Power Amplifier Application | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | |
Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-60V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=-0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-60V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=-0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Audio Frequency Power Amplifier Application | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-PNP
- 性質(zhì):
低頻或音頻放大 (LF)_開關(guān)管 (S)_功率放大 (L
- 封裝形式:
直插封裝
- 極限工作電壓:
60V
- 最大電流允許值:
3A
- 最大工作頻率:
9MHZ
- 引腳數(shù):
3
- 可代換的型號:
2SA1184,2SA1244,2SB1184,2SB1202,2SB1203,2SB1415,
- 最大耗散功率:
20W
- 放大倍數(shù):
- 圖片代號:
A-80
- vtest:
60
- htest:
9000000
- atest:
3
- wtest:
20
詳細(xì)參數(shù)
- 型號:
2SB906
- 制造商:
Distributed By MCM
- 功能描述:
SUB ONLY TOSHIBA TRANSISTORSC-64 -60V -3A 20W BCE
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TOSHIBA/東芝 |
24+ |
TO-252 |
1400 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
TOSHIBA/東芝 |
24+ |
TO252 |
7906200 |
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系 |
詢價 | ||
TOSHIBA/東芝 |
24+ |
TO-252 |
503117 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
TOSHIBA |
23+ |
TO-252 |
9526 |
詢價 | |||
TOSHIBA |
24+ |
TO-252 |
36800 |
詢價 | |||
TOSHIBA |
24+ |
原廠封裝 |
1400 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
NULL |
23+ |
TO-252 |
6000 |
專業(yè)優(yōu)勢供應(yīng) |
詢價 | ||
1415+ |
TO-252 |
28500 |
全新原裝正品,優(yōu)勢熱賣 |
詢價 | |||
KEXIN |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價 | ||
TOSHIBA |
19+ |
TO-252 |
59213 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 |