| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
2SB907 | Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | |
2SB907 | Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-40V(Min) ·DCCurrentGain- :hFE=2000(Min)@IC=-1A ·Fastswitchingspeed ·Largecurrentcapacity ·Complementaryto2SD1222 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
2SB907 | Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-40V(Min) ·DCCurrentGain- :hFE=2000(Min)@IC=-1A ·Fastswitchingspeed ·Largecurrentcapacity ·Complementaryto2SD1222 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
2SB907 | TRANSISTOR (SWITCHING, HANNER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS) SwitchingApplications HammerDrive,PulseMotorDriveApplications PowerAmplifierApplications ?HighDCcurrentgain:hFE(1)=2000(min)(VCE=?2V,IC=?1A) ?Lowsaturationvoltage:VCE(sat)=?1.5V(max)(IC=?2A) ?Complementaryto2SD1222. | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | |
2SB907 | Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | |
2SB907 | Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | |
Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-40V(Min) ·DCCurrentGain- :hFE=2000(Min)@IC=-1A ·Fastswitchingspeed ·Largecurrentcapacity ·Complementaryto2SD1222 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-40V(Min) ·DCCurrentGain- :hFE=2000(Min)@IC=-1A ·Fastswitchingspeed ·Largecurrentcapacity ·Complementaryto2SD1222 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-P+Darl+Di
- 性質(zhì)：
低頻或音頻放大 （LF）_開關(guān)管 （S）_功率放大 （L
- 封裝形式：
直插封裝
- 極限工作電壓：
60V
- 最大電流允許值：
3A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
2SB1072,2SB1214,2SB1303,2SB1415,
- 最大耗散功率：
15W
- 放大倍數(shù)：
β=5000
- 圖片代號：
A-80
- vtest：
60
- htest：
999900
- atest：
3
- wtest：
15
詳細參數(shù)
- 型號：
2SB907
- 制造商：
TOSHIBA
- 制造商全稱：
Toshiba Semiconductor
- 功能描述：
Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/東芝 |
24+ |
TO-252 |
503116 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
TOSHIBA |
24+ |
TO-252 |
11400 |
新進庫存/原裝 |
詢價 | ||
TOSHIBA |
23+ |
TO-252 |
9526 |
詢價 | |||
NULL |
23+ |
TO-252 |
6000 |
專業(yè)優(yōu)勢供應(yīng) |
詢價 | ||
1415+ |
TO-252 |
28500 |
全新原裝正品,優(yōu)勢熱賣 |
詢價 | |||
TOS |
23+ |
TO-251 |
3250 |
專做原裝正品,假一罰百! |
詢價 | ||
TOSHIBA |
1844+ |
NA |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
TOSHIBA |
24+ |
TO-251 |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
VISHAY/威世 |
23+ |
TO220 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
TOSHIBA/東芝 |
22+ |
SOT252 |
20000 |
保證原裝正品,假一陪十 |
詢價 |
