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2SC1945

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)?

2SC1945isasiliconNPNepitaxialplanartypetransistordesignedforRFpoweramplifiersonHFbandmobileradioapplications.

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

2SC1946

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1946isasiliconNPNepitaxialplanartypetransistordesignedforRFpoweramplifiersonVHFbandmobileradioapplications. APPLICATION 25wattsoutputpoweramplifiersapplicationsinVHFband.

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

2SC1946

NPN EPITAXIAL PLANAR TYPE

DESCRIPTION 2SC1946isasiliconNPNepitaxialplanartypetransistordesignedforRFpoweramplifiersonVHFbandmobileradioapplications. APPLICATION 25wattsoutputpoweramplifiersapplicationsinVHFband.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2SC1946A

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1946AisasiliconNPNepitaxialplanartypetransistordesignedforRFpoweramplifiersonVHFbandmobileradioapplications. APPLICATION 25wattsoutputpoweramplifiersinVHFbandmobileradioapplications.

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

2SC1946A

NPN EPITAXIAL PLANAR TYPE

DESCRIPTION 2SC1946AisasiliconNPNepitaxialplanartypetransistordesignedforRFpoweramplifiersonVHFbandmobileradioapplications. APPLICATION 25wattsoutputpoweramplifiersinVHFbandmobileradioapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2SC1946A

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The2SC1946AisDesignedfor12.5V175MHzLarge-SignalPowerAmplifierApplications. FEATURESINCLUDE: ?HighCommonEmitterPowerGain ?OutputPower=30W

ASI

Advanced Semiconductor

2SC1947

NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1947isasiliconNPNepitaxialplanartypetransistordesignedforindustrialuseRFpoweramplifiersonVHFbandmobileradioapplications. FEATURES ●Highpowergain:Gpe≥10.7dB @VCC=13.5V,PO=3.5W,f=175MHz ●TO-39metalseeledpackageforhighreliability. ●Em

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

2SC1947

HIGH POWER TRANSISTOR SILICON NPN

HIGHPOWERTRANSISTORSILICONNPN

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2SC1953

SI PNP EPITAXIAL PLANAR

SiliconPNPepitaxialplanartype Foraudiosystem/plidriveComplementaryto2SC1953 ■Features ?Acomplementarypairwith2SC1953,isoptimumforthepredriverstageofa60Wto100Woutputamplifier ?TO-126Bpackagewhichrequiresnoinsulationplateforinstallationtothehe

PanasonicPanasonic Semiconductor

松下松下電器

2SC1953

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SA914 ·HighVCEO APPLICATIONS ·Forlow-frequencypowerpre-amplification

SAVANTIC

Savantic, Inc.

供應(yīng)商型號品牌批號封裝庫存備注價格
FUJ
24+
TO-126
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
ISC
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
FUJITSU/富士通
22+
TO-126
6000
十年配單,只做原裝
 詢價
FUJITSU/富士通
22+
TO-126
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
FUJI
25+
TO-126
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
24+
TO-220
10000
全新
 詢價
PANASONIC/松下
2048+
TO-220
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
松下
20+
TO-220
154
進口原裝現(xiàn)貨,假一賠十
 詢價
松下
21+
TO-220
154
原裝現(xiàn)貨假一賠十
 詢價
HIT
24+
原廠封裝
2000
原裝現(xiàn)貨假一罰十
 詢價
更多2SC19供應(yīng)商 更新時間2025-4-12 10:20:00

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