首頁 >2SC19>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

2SC1969

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)

C1969,2SC1969isasiliconNPNepitaxialplanartypetransistordesignedforRFpoweramplifiersonHFbandmobileradioapplications.

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

2SC1969

isc Silicon NPN Power Transistor

DESCRIPTION ·HighPowerGain-:Gpe≥12dB,f=27MHz,PO=16W ·HighReliability APPLICATIONS ·Designedfor10~14wattsoutputpowerclassABamplifiersapplicationsinHFband.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SC1970

isc Silicon NPN Power Transistor

DESCRIPTION ?HighPowerGain- :Gpe≥9.2dB,f=175MHz,PO=1W;VCC=13.5V ?HighReliability APPLICATIONS ?DesignedforRFpoweramplifiersonVHFbandmobileradioapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SC1971

Marking：C1971；Package：T-30E；NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

DESCRIPTION 2SC1971isasiliconNPNepitaxailplanartypetransistordesignedforRFPowerAmplifiersonVHFbandmobileradioapplications. FEATURES ●Highpowergain:Gpe≥10dB, @VCC=13.5V,Po=6W,f=175MHz ●Emitterballastedconstruction,goldmetallizationforhigh reliabil

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

2SC1971

isc Silicon NPN Power Transistor

DESCRIPTION ?HighPowerGain- :Gpe≥10dB,f=175MHz,PO=6W;VCC=13.5V ?HighReliability APPLICATIONS ?DesignedforRFpoweramplifiersonVHFbandmobileradioapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SC1971

silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio

DESCRIPTION 2SC1971isasiliconNPNepitaxailplanartypetransistordesignedforRFPowerAmplifiersonVHFbandmobileradioapplications. FEATURES ●Highpowergain:Gpe≥10dB, @VCC=13.5V,Po=6W,f=175MHz ●Emitterballastedconstruction,goldmetallizationforhigh reliabil

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

2SC1971

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASI2SC1971isDesignedforRFpoweramplifiersonVHFbandmobileradioapplications. FEATURESINCLUDE: ?ReplacesOriginal2SC1971inMostApplications ?HighGainReducesDriveRequirements ?EconomicalTO-220CEPackage

ASI

Advanced Semiconductor

2SC1971-01

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

DESCRIPTION 2SC1971isasiliconNPNepitaxailplanartypetransistordesignedforRFPowerAmplifiersonVHFbandmobileradioapplications. FEATURES ●Highpowergain:Gpe≥10dB, @VCC=13.5V,Po=6W,f=175MHz ●Emitterballastedconstruction,goldmetallizationforhigh reliabil

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

2SC1972

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

2SC1972

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASI2SC1972isDesignedforRFpoweramplifiersonVHFbandmobileradioapplications. FEATURESINCLUDE: ?ReplacesOriginal2SC1972inMostApplications ?HighGainReducesDriveRequirements ?EconomicalTO-220CEPackage

ASI

Advanced Semiconductor

供應商型號品牌批號封裝庫存備注價格
FUJ
24+
TO-126
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
ISC
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
FUJITSU/富士通
22+
TO-126
6000
十年配單,只做原裝
 詢價
FUJITSU/富士通
22+
TO-126
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
FUJI
25+
TO-126
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
24+
TO-220
10000
全新
 詢價
PANASONIC/松下
2048+
TO-220
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
松下
20+
TO-220
154
進口原裝現(xiàn)貨,假一賠十
 詢價
松下
21+
TO-220
154
原裝現(xiàn)貨假一賠十
 詢價
HIT
24+
原廠封裝
2000
原裝現(xiàn)貨假一罰十
 詢價
更多2SC19供應商 更新時間2025-4-12 10:20:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多