首頁 >2SC4003E-E>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=50mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=50mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:200mA Collector-basevoltage V(BR)CBO:400V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實業(yè)深圳市永而佳實業(yè)有限公司 | WINNERJOIN | ||
TO-251-3LPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighhFE ●LowVCE(sat) | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
SiliconNPNtransistorinaTO-252PlasticPackage. Descriptions SiliconNPNtransistorinaTO-252PlasticPackage. Features Highbreakdownvoltage,adoptionofMBITprocessexcellenthFElinearity. Applications Highvoltagedriverapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍箭電子佛山市藍箭電子股份有限公司 | FOSHAN | ||
iscSiliconNPNPowerTransistor DESCRIPTION ?HighhFE ?Lowcollector-to-emittersaturationvoltage ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Highswitchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
NPNTripleDiffusedPlanarSiliconTransistor Features ●Highbreakdownvoltage ●AdoptionofMBITprocess ●ExcellenthFElinearity | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
Plastic-EncapsulatedTransistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:200mA Collector-basevoltage V(BR)CBO:400V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | ||
High-VoltageDriverApplications? High-VoltageDriverApplications Features ·Highbreakdownvoltage. ·AdoptionofMBITprocess. ·ExcellenthFElinearity. | SANYOSanyo Semicon Device 三洋三洋電機株式會社 | SANYO |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | ||||
SANYO |
21+ |
TO-251 |
147 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
SANYO |
22+ |
TO-251 |
25000 |
原裝現(xiàn)貨,價格優(yōu)惠,假一罰十 |
詢價 | ||
SANYO |
0821+ |
TO-251 |
147 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
SANYO |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價 | ||||
ON/安森美 |
2023+ |
8700 |
原裝現(xiàn)貨 |
詢價 | |||
SANYO |
23+ |
TO-251 |
147 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
24+ |
30000 |
詢價 | |||||
SANYO |
23+ |
SOT252 |
14700 |
專業(yè)優(yōu)勢供應(yīng) |
詢價 | ||
SANYO |
24+ |
SOT-252 |
2100 |
原裝現(xiàn)貨假一罰十 |
詢價 |
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