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2SC5761

NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

NPNSiGeRFTRANSISTORFOR LOWNOISE?HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES ?Idealforlownoise?high-gainamplification NF=0.9dBTYP.@VCE=2V,IC=5mA,f=2GHz ?Maximumstablepowergain:MSG=20.0dBTYP.@VCE=2V,IC=20mA

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SC5761

NPN SiGe RF TRANSISTOR FOR LOW NOISE ? HIGH-GAIN AMPLIFICATION

FEATURES ?Idealforlownoise?high-gainamplification NF=0.9dBTYP.@VCE=2V,IC=5mA,f=2GHz ?Maximumstablepowergain:MSG=20.0dBTYP.@VCE=2V,IC=20mA,f=2GHz ?SiGetechnology(fT=60GHz,fmax=60GHz) ?Flat-lead4-pinthin-typesuperminimold(M04)packag

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5761-T2

NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

NPNSiGeRFTRANSISTORFOR LOWNOISE?HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES ?Idealforlownoise?high-gainamplification NF=0.9dBTYP.@VCE=2V,IC=5mA,f=2GHz ?Maximumstablepowergain:MSG=20.0dBTYP.@VCE=2V,IC=20mA

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SC5761-T2

NPN SiGe RF TRANSISTOR FOR LOW NOISE ? HIGH-GAIN AMPLIFICATION

FEATURES ?Idealforlownoise?high-gainamplification NF=0.9dBTYP.@VCE=2V,IC=5mA,f=2GHz ?Maximumstablepowergain:MSG=20.0dBTYP.@VCE=2V,IC=20mA,f=2GHz ?SiGetechnology(fT=60GHz,fmax=60GHz) ?Flat-lead4-pinthin-typesuperminimold(M04)packag

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5763

Switching Regulator Applications

SwitchingRegulatorApplications Features ?Highbreakdownvoltage. ?Highreliability. ?High-speedswitching. ?WideASO. ?AdoptionofMBITprocess.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

2SC5763

isc Silicon NPN Power Transistors

DESCRIPTION ?Collector-EmitterBreakdownVoltage-:V(BR)CEO=400V(Min) ?FastSwitchingSpeed ?WideAreaofSafeOperation APPLICATIONS ?Designedforswitchingregulatorsapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SC5764

Switching Regulator Applications

SwitchingRegulatorApplications Features ?Highbreakdownvoltage. ?Highreliability. ?High-speedswitching. ?WideASO. ?AdoptionofMBITprocess.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

2SC5764

isc Silicon NPN Power Transistors

DESCRIPTION ·Collector-EmitterBreakdownVoltage:V(BR)CEO=400V(Min) ·FastSwitchingSpeed ·WideAreaofSafeOperation APPLICATIONS ·Designedforswitchingregulatorsapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SC5765

MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS

MEDIUMPOWERAMPLIFIERAPPLICATIONS STOROBOFLASHAPPLICATIONS ?LowSaturationVoltage:VCE(sat)(1)=0.27V(max.)(IC=3A/IB=60mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC5765

MEDIUM POWER AMPLIFIER STROBO FLASH

DESCRIPTION mediumpoweramplifierapplications stroboflashapplications FEATURES *LowSaturationVoltage:VCE(sat)=0.27V(max.),(Ic=3A/IB=60mA)

UTCUnisonic Technologies

友順友順科技股份有限公司

詳細(xì)參數(shù)

  • 型號：

    2SC576

  • 制造商：

    Renesas Electronics Corporation

  • 功能描述：

    RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS/瑞薩
24+
SOT343
7906200
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系
 詢價
SANYO
24+
30000
詢價
NEC
23+
SOT343
5000
全新原裝
 詢價
RENESAS
23+
SOT-343
63000
原裝正品現(xiàn)貨
 詢價
HITACHI
2023+
SMD/DIP
8700
原裝現(xiàn)貨
 詢價
RENESAS/瑞薩
23+
SOT-343
54258
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
 詢價
RENESAS/瑞薩
23+
SOT-343
360000
交期準(zhǔn)時服務(wù)周到
 詢價
RENESAS
23+
SOT4
66800
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！
 詢價
NEC
20+
SOT343
49000
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
NEC
24+
SOT-343
65300
一級代理/放心購買!
 詢價
更多2SC576供應(yīng)商 更新時間2025-1-28 10:36:00

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