首頁 >2SD1899-ZK>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NPNPLASTICENCAPSULATETRANSISTORS NPNPLASTICENCAPSULATETRANSISTORS P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | ||
iscSiliconNPNPowerTransistor DESCRIPTION ?Lowcollectorsaturationvoltage ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Hightransitionfrequencyapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SiliconNPNtransistorinaTO-252PlasticPackage. Descriptions SiliconNPNtransistorinaTO-252PlasticPackage. Features LowVCE(sat),highcurrentandhighfT,excellentlinearityofhFE,fastswitchingtime. Applications Relaydrivers,high-speedinverters,generalhigh-currentswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | ||
TO-252Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | ||
TO-252-2LPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●LowVCE(sat) ●HighTransitionFrequency | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
SiliconNPNPowerTransistor FEATURES ·Lowcollectorsaturationvoltage APPLICATIONS ·AudioFrequencyAmplifierandSwitching, especiallyinHybridIntegratedCircuits | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
NPNSiliconEpitaxialTransistor Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?Capableof1.0WattsofPowerDissipation. ?Collector-current3.0A ?Collector-baseVoltage60V ?Operatingandstoragejuncti | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
SiliconNPNtransistorinaTO-126FPlasticPackage. Descriptions SiliconNPNtransistorinaTO-126FPlasticPackage. Features LowVCE(sat),highcurrentandhighfT,excellentlinearityofhFE,fastswitchingtime. Applications Relaydrivers,high-speedinverters,generalhigh-currentswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | ||
NPNSiliconEpitaxialTransistor Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?Capableof1.0WattsofPowerDissipation. ?Collector-current3.0A ?Collector-baseVoltage60V ?Operatingandstoragejuncti | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
NPNSiliconEpitaxialTransistor Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?Capableof1.0WattsofPowerDissipation. ?Collector-current3.0A ?Collector-baseVoltage60V ?Operatingandstoragejuncti | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
TO-251-3LPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighhFE ●LowVCE(sat) | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
NPNSILICONEPITAXIALTRANSISTORMP-3 DESCRIPTION 2SD1899-ZisdesignedforAudioFrequencyAmplifierandSwitching,especiallyinHybridIntegratedCircuits. FEATURES ?HighhFEhFE=100to400 ?LowVCE(sat)VCE(sat)=0.3VCE | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
iscSiliconNPNPowerTransistor DESCRIPTION ?Lowcollectorsaturationvoltage ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Hightransitionfrequencyapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SILICONPOWERTRANSISTOR DESCRIPTION The2SD1899-ZisdesignedforAudioFrequencyAmplifierandSwitching,especiallyinHybridIntegratedCircuits. FEATURES ?HighhFE:hFE=100to400 ?LowVCE(sat):VCE(sat)≤0.25V | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
NPNSiliconEpitaxialTransistor Features ●LowVCE(sat). ●HighhFE. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | ||
TO-252Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
國產(chǎn) |
24+ |
SOT-252 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
NEC |
23+ |
SOT-252 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
17 |
23+ |
TO-252 |
6000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
17 |
23+ |
TO-252 |
6000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
NEC |
24+ |
SOT-252 |
37650 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) | ||
17 |
24+ |
TO-252 |
90 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
NEC |
24+ |
TO-252 |
16800 |
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!? |
詢價(jià) | ||
RENESAS/瑞薩 |
23+ |
251-252 |
688888 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳 |
詢價(jià) | ||
NEC |
21+ |
TO-252 |
770 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
NEC |
22+ |
TO-252 |
25000 |
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十 |
詢價(jià) |
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