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2SD2012

TO-220-3LPlastic-EncapsulateTransistors

FEATURES HighDCCurrentGain LowSaturationVoltage HighPowerDissipation

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

2SD2012

SiliconNPNtransistorinaTO-220FPlasticPackage.

Descriptions SiliconNPNtransistorinaTO-220FPlasticPackage. Features LowVCE(sat),Hightotalpowerdissipation,complementarypairwith2SB1375. Applications Audiofrequencypoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

2SD2012

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

2SD2012

TO-220FPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●Audiofrequencypoweramplifierapplications ●HighDCcurrentgain ●Lowsaturationvoltage ●Highpowerdissipation

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

2SD2012

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·Complementtotype2SB1366 ·Lowcollectorsaturationvoltage ·Collectorpowerdissipation:PC=25W(TC=25℃) APPLICATIONS ·Audiofrequencypoweramplifierandgeneralpurposeswitchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SD2012

NPNSiliconPowerTransistors

Features ·HighDCCurrentGain:hFE(1)=100(Min.) ·LowSaturationVoltage:VCE(sat)=1.0V(Max.) ·HighPowerDissipation:PC=25W(TC=25OC) ·LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ·EpoxymeetsUL94V-0flammabilityrating ·

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2SD2012

AudioFrequencyPowerAmplifierApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SD2012

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·Complementtotype2SB1366 ·Lowcollectorsaturationvoltage ·Collectorpowerdissipation:PC=25W(TC=25℃) APPLICATIONS ·Audiofrequencypoweramplifierandgeneralpurposeswitchingapplications

SAVANTIC

Savantic, Inc.

2SD2012

SiliconNPNTripleDiffusedType

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SD2012

NPNSILICONPOWERTRANSISTOR

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

2SD2012

NPNSILICONPOWERTRANSISTOR

DESCRIPTION The2SD2012isasiliconNPNpowertransistorhousedinTO-220Finsulatedpackage.Itisintededforpowerlinearandswitchingapplications. ■HIGHDCCURRENTGAIN ■LOWSATURATIONVOLTAGE ■INSULATEDPACKAGEFOREASYMOUNTING APPLICATIONS ■GENERALPURPOSEPOWERAMPLIFIERS ■G

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

2SD2012

NPNTRIPLEDIFFUSEDTYPE(AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATIONS)

AudioFrequencyPowerAmplifierApplications ?Lowsaturationvoltage:VCE(sat)=0.4V(typ.)(IC=2A/IB=0.2A) ?Highpowerdissipation:PC=25W(Tc=25°C)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SD2012FM

AudioFrequencyPowerAmplifierApplications

AudioFrequencyPowerAmplifierApplications ?Lowsaturationvoltage:VCE(sat)=0.4V(typ.)(IC=2A/IB=0.2A) ?Highpowerdissipation:PC=25W(Tc=25°C)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

詳細(xì)參數(shù)

  • 型號(hào)：

    2SD2012(F

  • 制造商：

    Toshiba America Electronic Components

  • 功能描述：

    Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220NIS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TOSHIBA
2024
TO220F
13500
16余年資質(zhì) 絕對(duì)原盒原盤(pán)代理渠道 更多數(shù)量
 詢價(jià)
TOSHIBA/東芝
23+
TO220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
TOSHIBA/東芝
2022
TO220F
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
TOSHIBA/東芝
23+
NA/
1200
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
 詢價(jià)
TOSHIBA/東芝
23+
0928+
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
TOSHIBA/東芝
23+
0928+
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
Toshiba
22+
10000
原廠原裝,價(jià)格優(yōu)勢(shì)!13246658303
 詢價(jià)
24+
N/A
75000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
TOS
24+
SMD
20000
一級(jí)代理原裝現(xiàn)貨假一罰十
 詢價(jià)
TOSHIBA/東芝
24+
TO220
420
大批量供應(yīng)優(yōu)勢(shì)庫(kù)存熱賣
 詢價(jià)
更多2SD2012(F供應(yīng)商 更新時(shí)間2025-1-16 15:14:00

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