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2SD669D

NPN Silicon Plastic-Encapsulate Transistor

Features ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ?Capableof1WattsofPowerDissipation. ?Collector-current1.5A ?Collector-baseVoltage180V ?

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

2SD669

NPNSiliconPlastic-EncapsulateTransistor

Features ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ?Capableof1WattsofPowerDissipation. ?Collector-current1.5A ?Collector-baseVoltage180V ?

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

2SD669

BIPOLARPOWERGENERALPURPOSETRANSISTOR

UTCUnisonic Technologies

友順友順科技股份有限公司

2SD669

Plastic-EncapsulatedTransistors

TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1W(Tamb=25℃) CollectorcurrentICM:1.5A Collector-basevoltageV(BR)CBO:180V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

2SD669

BIPOLARPOWERGENERALPURPOSETRANSISTOR

NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A

UTCUnisonic Technologies

友順友順科技股份有限公司

2SD669

NPNEpitaxialPlanarTransistors

NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

2SD669

BIPOLARPOWERGENERALPURPOSETRANSISTOR

UTCUnisonic Technologies

友順友順科技股份有限公司

2SD669

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SB649/649A(PNP) ·HighbreakdownvoltageVCEO:120/160V ·Highcurrent1.5A ·Lowsaturationvoltage,excellenthFElinearity APPLICATIONS ·Forlow-frequencypower amplifierapplications

SAVANTIC

Savantic, Inc.

2SD669

TO-126Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowFrequencyPowerAmplifierComplementaryPairwith2SB649/2SB649A

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

2SD669

NPNTypePlasticEncapsulateTransistors

FEATURES PowerdissipationPCM:1mW（Tamb=25℃） CollectorcurrentICM:1.5A Collector-basevoltageV(BR)CBO:180V Collector-emittervoltageVCEO2SD669:120V2SD669A:160V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

詳細參數

  • 型號：

    2SD669D

  • 功能描述：

    TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1.5A I(C) | TO-126

供應商型號品牌批號封裝庫存備注價格
UTC
24+
TO-126
5000
全現原裝公司現貨
 詢價
UTC/友順
24+
SOT89
100000
原裝現貨
 詢價
Micro Commercial Co
2022+
-
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
Micro Commercial Co
24+
TO-225AA TO-126-3
9350
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
UTC/友順
2022+
SOT-223
32500
原廠代理 終端免費提供樣品
 詢價
UTC/友順
23+
SOT-223
578676
原廠授權代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
UTC/友順
23+
12000
詢價
UTC/友順
2022+
SOT-223
30000
進口原裝現貨供應,原裝 假一罰十
 詢價
UTC/友順
20+
SOT-223
32500
現貨很近!原廠很遠!只做原裝
 詢價
UTC
20232024
SOT223
6000
老牌代理,長期現貨
 詢價
更多2SD669D供應商 更新時間2025-2-5 10:20:00

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