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2SJ602

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=73m?MAX.(VGS=?10V,ID=?10A) RDS(on)2=107m?MAX.(VGS=?4.0V,ID=?10A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ602

MOS Field Effect Transistor

Features Lowon-resistance RDS(on)1=73m?MAX.(VGS=-10V,ID=-10A) RDS(on)2=107m?MAX.(VGS=-4.0V,ID=-10A) LowCiss:Ciss=1300pFTYP. Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SJ602

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=?10V,ID=?10A) RDS(on)2=107mΩMAX.(VGS=?4.0V,ID=?10A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ602-S

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=73m?MAX.(VGS=?10V,ID=?10A) RDS(on)2=107m?MAX.(VGS=?4.0V,ID=?10A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ602-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=?10V,ID=?10A) RDS(on)2=107mΩMAX.(VGS=?4.0V,ID=?10A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ602-Z

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=73m?MAX.(VGS=?10V,ID=?10A) RDS(on)2=107m?MAX.(VGS=?4.0V,ID=?10A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ602-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=?10V,ID=?10A) RDS(on)2=107mΩMAX.(VGS=?4.0V,ID=?10A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ602-ZJ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=73m?MAX.(VGS=?10V,ID=?10A) RDS(on)2=107m?MAX.(VGS=?4.0V,ID=?10A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ602-ZJ

P-Channel MOSFET

■Features ●VDS(V)=-60V ●ID=-20A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SJ602-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=?10V,ID=?10A) RDS(on)2=107mΩMAX.(VGS=?4.0V,ID=?10A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ602-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=?10V,ID=?10A) RDS(on)2=107mΩMAX.(VGS=?4.0V,ID=?10A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ602-Z

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=73m?MAX.(VGS=?10V,ID=?10A) RDS(on)2=107m?MAX.(VGS=?4.0V,ID=?10A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ602-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=?10V,ID=?10A) RDS(on)2=107mΩMAX.(VGS=?4.0V,ID=?10A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ602-ZJ

P-ChannelMOSFET

■Features ●VDS(V)=-60V ●ID=-20A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SJ602-ZJ

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=73m?MAX.(VGS=?10V,ID=?10A) RDS(on)2=107m?MAX.(VGS=?4.0V,ID=?10A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    2SJ602

  • 制造商：

    KEXIN

  • 制造商全稱：

    Guangdong Kexin Industrial Co.,Ltd

  • 功能描述：

    MOS Field Effect Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
TO-262
503119
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
NEC
17+
TO-220
6200
詢價
NEC
24+
TO-220
4000
詢價
NEC
23+
TO-220
35890
詢價
NEC
2339+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
 詢價
KEXIN
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
NEC
23+
TO-220
30000
專做原裝正品,假一罰百!
 詢價
NEC
1822+
TO-262
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
NEC
18+
TO-220F
41200
原裝正品,現(xiàn)貨特價
 詢價
NEC
20+
TO-220
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
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更多2SJ602供應(yīng)商 更新時間2024-12-28 17:06:00

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