首頁 >2SJ605-AZ>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

2SJ605

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ605

MOSFieldEffectTransistors

Features ●Superlowon-stateresistance: RDS(on)1=20mMAX.(VGS=-10V,ID=-33A) RDS(on)2=31mMAX.(VGS=-4.0V,ID=-33A) ●Lowinputcapacitance Ciss=4600pFTYP.(VDS=-10V,VGS=0A) ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SJ605

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=–10V,ID=–33A) RDS(on)2=31m?MAX.(VGS=–4.0V,ID=–33A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ605-S

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=–10V,ID=–33A) RDS(on)2=31m?MAX.(VGS=–4.0V,ID=–33A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ605-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ605-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ605-Z

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=–10V,ID=–33A) RDS(on)2=31m?MAX.(VGS=–4.0V,ID=–33A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ605-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ605-ZJ

P-ChannelMOSFET

■Features ●VDS(V)=-60V ●ID=-65A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SJ605-ZJ

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=–10V,ID=–33A) RDS(on)2=31m?MAX.(VGS=–4.0V,ID=–33A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細參數(shù)

  • 型號：

    2SJ605-AZ

  • 制造商：

    Renesas Electronics Corporation

  • 功能描述：

    Trans MOSFET P-CH 60V 65A 3-Pin(3+Tab) TO-220AB

供應商型號品牌批號封裝庫存備注價格
RENESAS
TO-220
37526
只做原裝貨值得信賴
 詢價
RENESAS/瑞薩
2021+
TO-220
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
RENESAS
21+
TO-220
3806
原裝現(xiàn)貨假一賠十
 詢價
RENESAS/瑞薩
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
RENESAS/瑞薩
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
-
23+
TO-220
5000
原廠授權代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
RENESAS
22+
TO-220
25000
原裝現(xiàn)貨,價格優(yōu)惠,假一罰十
 詢價
RENESAS
2011+
TO-220
3685
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
RENESAS
2220+
TO-220
14129
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
RENESAS
589220
16余年資質 絕對原盒原盤 更多數(shù)量
 詢價
更多2SJ605-AZ供應商 更新時間2024-12-27 14:00:00

相關規(guī)格書

更多

相關庫存

更多