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2SJ605

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ605

MOSFieldEffectTransistors

Features ●Superlowon-stateresistance: RDS(on)1=20mMAX.(VGS=-10V,ID=-33A) RDS(on)2=31mMAX.(VGS=-4.0V,ID=-33A) ●Lowinputcapacitance Ciss=4600pFTYP.(VDS=-10V,VGS=0A) ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SJ605

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=–10V,ID=–33A) RDS(on)2=31m?MAX.(VGS=–4.0V,ID=–33A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ605-S

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=–10V,ID=–33A) RDS(on)2=31m?MAX.(VGS=–4.0V,ID=–33A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ605-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ605-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ605-Z

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=–10V,ID=–33A) RDS(on)2=31m?MAX.(VGS=–4.0V,ID=–33A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ605-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ605-ZJ

P-ChannelMOSFET

■Features ●VDS(V)=-60V ●ID=-65A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SJ605-ZJ

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=–10V,ID=–33A) RDS(on)2=31m?MAX.(VGS=–4.0V,ID=–33A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    2SJ605-AZ

  • 制造商：

    Renesas Electronics Corporation

  • 功能描述：

    Trans MOSFET P-CH 60V 65A 3-Pin(3+Tab) TO-220AB

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
RENESAS
TO-220
37526
只做原裝貨值得信賴
 詢價(jià)
RENESAS/瑞薩
2447
TO-220
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
RENESAS
21+
TO-220
3806
原裝現(xiàn)貨假一賠十
 詢價(jià)
RENESAS/瑞薩
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
RENESAS/瑞薩
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
-
23+
TO-220
5000
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳
 詢價(jià)
RENESAS
2011+
TO-220
3685
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
RENESAS
589220
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量
 詢價(jià)
RENESAS/瑞薩
23+
NA/
3685
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
 詢價(jià)
RENESAS
2023+
TO-220
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
 詢價(jià)
更多2SJ605-AZ供應(yīng)商 更新時(shí)間2025-3-4 14:00:00

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