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2SJ604

MOSFieldEffectTransistor

Features ●Lowon-resistance RDS(on)1=30mMAX.(VGS=-10V,ID=-23A) RDS(on)2=43mMAX.(VGS=-4.0V,ID=-23A) ●LowCiss:Ciss=3300pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SJ604

MOSFIELDEFFECTTRANSISTOR

SWITCHINGP-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=30m?MAX.(VGS=?10V,ID=?23A) RDS(on)2=43m?MAX.(VGS=?4.0V,ID=?23A) ?Lowinput

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ604

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=?10V,ID=?23A) RDS(on)2=43mΩMAX.(VGS=?4.0V,ID=?23A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ604.

P-Channel60V(D-S)175?CMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

2SJ604-S

MOSFIELDEFFECTTRANSISTOR

SWITCHINGP-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=30m?MAX.(VGS=?10V,ID=?23A) RDS(on)2=43m?MAX.(VGS=?4.0V,ID=?23A) ?Lowinput

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ604-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=?10V,ID=?23A) RDS(on)2=43mΩMAX.(VGS=?4.0V,ID=?23A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ604-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHINGP-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=30m?MAX.(VGS=?10V,ID=?23A) RDS(on)2=43m?MAX.(VGS=?4.0V,ID=?23A) ?Lowinput

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ604-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=?10V,ID=?23A) RDS(on)2=43mΩMAX.(VGS=?4.0V,ID=?23A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ604-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=?10V,ID=?23A) RDS(on)2=43mΩMAX.(VGS=?4.0V,ID=?23A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ604-ZJ

P-ChannelMOSFET

■Features ●VDS(V)=-60V ●ID=-45A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SJ604-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHINGP-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=30m?MAX.(VGS=?10V,ID=?23A) RDS(on)2=43m?MAX.(VGS=?4.0V,ID=?23A) ?Lowinput

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細參數(shù)

  • 型號：

    2SJ604-AZ

  • 制造商：

    Renesas Electronics

  • 功能描述：

    Pch -60V -45A 30m@10V TO220AB Bulk

  • 功能描述：

    Pch -60V -45A 30m@10V TO220AB Cut Tape

  • 制造商：

    Renesas Electronics Corporation

  • 功能描述：

    Pch MOSFET,60V,45A,23m ohm,TO-220AB

  • 制造商：

    Renesas

  • 功能描述：

    Trans MOSFET P-CH 60V 45A 3-Pin(3+Tab) TO-220AB

供應商型號品牌批號封裝庫存備注價格
RENESAS
TO-220
37526
只做原裝貨值得信賴
 詢價
RENESAS/瑞薩
2021+
TO-220
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
RENESAS
21+
TO-220
940
原裝現(xiàn)貨假一賠十
 詢價
NEC
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NEC
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
RENESAS
22+
TO-220
25000
原裝現(xiàn)貨,價格優(yōu)惠,假一罰十
 詢價
NEC
19+
TO-220
550
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
RENESAS/瑞薩
2023+
TO-220
8635
一級代理優(yōu)勢現(xiàn)貨,全新正品直營店
 詢價
RENESAS
589220
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
 詢價
NEC
23+
NA/
950
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
更多2SJ604-AZ供應商 更新時間2024-11-6 17:40:00

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