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2SK3060-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3060isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=10V,ID=35A) RDS(on)2=20mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3060-ZJ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SK3060isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=13m?MAX.(VGS=10V,ID=35A) RDS(on)2=20m?MAX.(VGS=4.0V,ID=35A) ?LowCiss:Ciss=2400pFTYP. ?Built-in

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3060-ZJ

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3060

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3060isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=10V,ID=35A) RDS(on)2=20mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3060

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SK3060isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=13m?MAX.(VGS=10V,ID=35A) RDS(on)2=20m?MAX.(VGS=4.0V,ID=35A) ?LowCiss:Ciss=2400pFTYP. ?Built-in

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3060

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3060-S

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SK3060isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=13m?MAX.(VGS=10V,ID=35A) RDS(on)2=20m?MAX.(VGS=4.0V,ID=35A) ?LowCiss:Ciss=2400pFTYP. ?Built-in

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3060-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3060isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=10V,ID=35A) RDS(on)2=20mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3060-S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3060-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3060isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=10V,ID=35A) RDS(on)2=20mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

供應商型號品牌批號封裝庫存備注價格
NEC
23+
TO-252
9500
專業(yè)優(yōu)勢供應
 詢價
NEC
22+
SOT-263
20000
保證原裝正品,假一陪十
 詢價
NEC
22+
SOT-263
100000
代理渠道/只做原裝/可含稅
 詢價
NEC
23+
SOT-263
4000
正品原裝貨價格低
 詢價
NEC
24+
TO-263
36800
詢價
NEC
2023+環(huán)?，F(xiàn)貨
TO-263
18000
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
 詢價
NEC
2023+
TO-263
50000
原裝現(xiàn)貨
 詢價
NEC
17+
TO-220
6200
詢價
NEC
23+
TO-220F
35890
詢價
NEC
2339+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
更多2SK3060-ZJ供應商 更新時間2025-2-6 14:03:00

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