首頁(yè) >2SK3511-AZ>規(guī)格書列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFieldEffectTransistor Features ●Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ●LowCiss:Ciss=5900pFTYP. ●Built-ingateprotectiondiode | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
詳細(xì)參數(shù)
- 型號(hào):
2SK3511-AZ
- 功能描述:
MOSFET N-CH 75V MP-25/TO-220
- RoHS:
是
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
-
- 標(biāo)準(zhǔn)包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點(diǎn):
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時(shí)的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
RENESAS/瑞薩 |
22+ |
MP-25TO-220 |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
RENESAS/瑞薩 |
22+ |
MP-25TO-220 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
Renesas |
24+ |
MP-25TO-TO-220 |
35628 |
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) | ||
NEC |
TO-220 |
貨真價(jià)實(shí),假一罰十 |
25000 |
詢價(jià) | |||
NEC |
22+ |
TO-220 |
40256 |
本公司只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
NEC |
24+ |
TO-262 |
8866 |
詢價(jià) | |||
NEC |
23+ |
TO-262 |
12198 |
全新原裝 |
詢價(jià) | ||
NEC |
23+ |
TO-220 |
5000 |
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道??商峁┐罅繋?kù)存,詳 |
詢價(jià) | ||
RENESAS(瑞薩)/IDT |
23+ |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | |||
NEC |
2339+ |
4326 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存! |
詢價(jià) |
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