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2SK3511

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3511

MOS Field Effect Transistor

Features ●Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ●LowCiss:Ciss=5900pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SK3511

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3511

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3511-S

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3511-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3511-Z

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3511-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3511-ZJ

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3511-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號：

    2SK3511

  • 制造商：

    Renesas Electronics

  • 功能描述：

    Cut Tape

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NEC
24+
TO-220AB
8866
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NEC
2339+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
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NEC
23+
TO-220AB
7600
全新原裝現(xiàn)貨
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KEXIN
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
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NEC
2023+
TO-220AB
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
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NEC
24+
6540
原裝現(xiàn)貨/歡迎來電咨詢
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NEC
21+
TO-220
30000
只做正品原裝現(xiàn)貨
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NEC
22+
TO-220
9600
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R
23+
T0-220
10000
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VBSEMI/臺灣微碧
23+
T0-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
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更多2SK3511供應(yīng)商 更新時間2025-1-23 14:30:00

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