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2SK3511-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3511-ZJ

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3511-ZJ

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SK3511

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3511

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SK3511

MOSFieldEffectTransistor

Features ●Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ●LowCiss:Ciss=5900pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SK3511

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3511-S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SK3511-S

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3511-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3511-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3511-Z

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SK3511-Z

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
24+
TO-263
8866
詢價(jià)
NEC
23+
TO-263
11789
全新原裝
 詢價(jià)
NEC
23+
TO-263
10000
公司只做原裝正品
 詢價(jià)
NEC
22+
TO-263
6000
十年配單,只做原裝
 詢價(jià)
NEC
22+
TO-263
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
NEC
24+
TO-263
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
FUJI
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
FUJITSU/富士通
24+
100000
原裝正品現(xiàn)貨
 詢價(jià)
FUJITSU/富士通
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
FUJITSU/富士通
2022
TO263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
更多2SK3511-ZJ供應(yīng)商 更新時(shí)間2025-1-7 16:30:00

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