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2SK3511-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3511-ZJ

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3511-ZJ

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3511

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3511

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3511

MOSFieldEffectTransistor

Features ●Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ●LowCiss:Ciss=5900pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SK3511

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3511-S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3511-S

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3511-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

供應商型號品牌批號封裝庫存備注價格
NEC
24+
TO-263
8866
詢價
NEC
23+
TO-263
11789
全新原裝
 詢價
NEC
23+
TO-263
10000
公司只做原裝正品
 詢價
NEC
22+
TO-263
6000
十年配單,只做原裝
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NEC
22+
TO-263
25000
只做原裝進口現(xiàn)貨,專注配單
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NEC
24+
TO-263
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
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FUJI
23+
NA
19960
只做進口原裝,終端工廠免費送樣
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FUJITSU/富士通
24+
100000
原裝正品現(xiàn)貨
 詢價
FUJITSU/富士通
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FUJITSU/富士通
2022
TO263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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更多2SK3511-ZJ供應商 更新時間2025-2-15 16:30:00

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