| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
2SK363 | N CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS) ForAudioAmplifier,AnalogSwitch,ConstantCurrentandImpedanceConverterApplications ?Highbreakdownvoltage:VGDS=?40V ?Highinputimpedance:IGSS=?1.0nA(max)(VGS=?30V) ?LowRDS(ON):RDS(ON)=20?(typ.)(IDSS=15mA) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | |
2SK363 | Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | |
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The2SK3634isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasDC/DCconverter. FEATURES ?Highvoltage:VDSS=200V ?Gatevoltagerating:±30VRDS(on)=0.60? | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOS Field Effect Transistor Features ?Highvoltage:VDSS=200V ?Gatevoltagerating:30V RDS(on)=0.60MAX.(VGS=10V,ID=3.0A) ?LowCiss:Ciss=270pFTYP.(VDS=10V,VGS=0V) ?Built-ingateprotectiondiode | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3634isN-channelMOSFETdevicethatfeatures alowon-stateresistanceandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasDC/DCconverter. FEATURES ?Highvoltage:VDSS=200V ?Gatevolta | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The2SK3634isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasDC/DCconverter. FEATURES ?Highvoltage:VDSS=200V ?Gatevoltagerating:±30VRDS(on)=0.60? | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3634isN-channelMOSFETdevicethatfeatures alowon-stateresistanceandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasDC/DCconverter. FEATURES ?Highvoltage:VDSS=200V ?Gatevolta | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The2SK3635isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasDC/DCconverter. FEATURES ?Highvoltage:VDSS=200V ?Gatevoltagerating:±30V ?Lowon-stateresistance | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOS Field Effect Transistor Features ●Highvoltage:VDSS=200V ●Gatevoltagerating:30V ●Lowon-stateresistance RDS(on)=0.43MAX.(VGS=10V,ID=4.0A) ●LowCiss:Ciss=390pFTYP. ●Built-ingateprotectiondiode | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3635isN-channelMOSFETdevicethatfeatures alowon-stateresistanceandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasDC/DCconverter. FEATURES ?Highvoltage:VDSS=200V ?Gatevolta | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.43Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.43Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The2SK3635isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasDC/DCconverter. FEATURES ?Highvoltage:VDSS=200V ?Gatevoltagerating:±30V ?Lowon-stateresistance | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3635isN-channelMOSFETdevicethatfeatures alowon-stateresistanceandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasDC/DCconverter. FEATURES ?Highvoltage:VDSS=200V ?Gatevolta | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon N-channel Power MOSFET Features ●Avalancheenergycapacityguaranteed:EAS20mJ ●Gate-sourcesurrendervoltageVGSS=30Vguaranteed ●High-speedswitching:tf=50ns ●Nosecondarybreakdown | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
Silicon N-channel power MOSFET SiliconN-channelpowerMOSFET ForPDP/Forhigh-speedswitching ■Features ?Lowon-resistance,lowQg ?Highavalancheresistance | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
Silicon N-channel Power MOSFET Features ●Lowon-resistance,lowQg ●Highavalancheresistance | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN |
詳細(xì)參數(shù)
- 型號：
2SK363
- 制造商：
Panasonic Industrial Company
- 功能描述：
TRANSISTOR
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
60000 |
詢價 | |||||
TOS |
23+ |
20000 |
正品原裝貨價格低qq:2987726803 |
詢價 | |||
東芝 |
2023+ |
16+ |
8700 |
原裝現(xiàn)貨 |
詢價 | ||
NEC |
12+ |
TO-252(DPAK) |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。 |
詢價 | ||
NEC |
23+ |
TO-252 |
20000 |
原裝正品,假一罰十 |
詢價 | ||
NEC |
16+ |
TO-263 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
NEC |
2339+ |
4326 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存! |
詢價 | |||
NEC |
23+ |
SOT |
9680 |
價格優(yōu)勢、原裝現(xiàn)貨、客戶至上。歡迎廣大客戶來電查詢 |
詢價 | ||
NEC |
24+ |
TO-252 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
NEC |
05+ |
TO252-2 |
2500 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 |
相關(guān)規(guī)格書
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相關(guān)庫存
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- 2SK664
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- 2SK690-M
- 2SK690-R
- 2SK715W
- 2SK738-Z-E1
- 2SK771
- 2SK852
