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2SK367

MINI PACKAGE SERIES

Application GeneralPurpose> LowNoise HighVoltage HighCurrent HighCurrent LowImpedanceLowNoise(NEW AudioDrive&Out NEW HighB Muting&SW FMRF,MIXOSC AMCONV.FM/AMIF AMFF,CONVIF FM/AMRF,MIXOSC Application GeneralPurpose HighIYfslLowNoise AnalogSW&Ge

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SK367

N CHANNEL JUNCTION TYPE FOR AUDIO, HIGH VOLTAGE AMPLIFIER AND CONSTANT CURRENT APPLICATIONS)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SK367

Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current Applications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SK3670

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SK3673-01MR

N-CHANNEL SILICON POWER MOSFET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

2SK3673-01MR

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=700V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3674-01L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=7.0A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3674-01S

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=7.0A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3674-01SJ

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=7.0A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3675-01

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=7.0A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3676-01L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=6.0A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3676-01S

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=6.0A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3676-01SJ

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=6.0A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3677-01MR

N-CHANNEL SILICON POWER MOSFET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

2SK3677-01MR

isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-220Fpackaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchingapplicati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3678-01

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=9.0A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3679

Fuji Power MOSFET SuperFAP-G series Target Specification

FUJIPOWERMOSFETSuperFAP-GSeries Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

2SK3679-01MR

N-CHANNEL SILICON POWER MOSFET

FUJIPOWERMOSFETSuperFAP-GSeries Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

2SK3679-01MR

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=9.0A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK367_07

Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current Applications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

詳細(xì)參數(shù)

  • 型號(hào):

    2SK367

  • 制造商:

    Toshiba

  • 功能描述:

    Trans MOSFET N-CH 150V 0.67A 3-Pin TO-92 Mod Bulk

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NEC
24+
60000
詢價(jià)
TOS
23+
20000
正品原裝貨價(jià)格低qq:2987726803
詢價(jià)
FUJI
17+
TO-220F
6200
100%原裝正品現(xiàn)貨
詢價(jià)
FUJI
1915
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
詢價(jià)
FUJI
23+
TO-220F
9516
詢價(jià)
FUJI
23+
TO220F
7635
全新原裝優(yōu)勢(shì)
詢價(jià)
FUJ
2016+
TO-220F
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
詢價(jià)
富士通
15+
TO-220
11560
全新原裝,現(xiàn)貨庫存,長(zhǎng)期供應(yīng)
詢價(jià)
FUJITSU
2020+
TO-220F
6
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價(jià)
FUJI
24+
TO-220FP
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價(jià)
更多2SK367供應(yīng)商 更新時(shí)間2025-1-8 10:50:00