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AM30N10

iscN-ChannelMOSFETTransistor

?FEATURES ?DrainCurrent:ID=20A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=50mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?LEDbackl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

CJD30N10

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

CJD30N10

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

CJU30N10

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

CJU30N10

N-ChannelMOSFETusesadvancedSGTtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

F30N10G

N-ChannelEnhancementMOSFET

Features ?VDS=100V,ID=30A ?RDS(ON)=17mΩ@VGS=10V(Typ.) ?RDS(ON)=22mΩ@VGS=4.5V(Typ.) ?HighPowerandcurrenthandingcapability ?Leadfreeproductisacquired ?SurfaceMountPackage MainApplications ?BatteryProtection ?LoadSwitch ?PowerManagement

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

FIR30N10LG

100VN-ChannelMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FTK30N10D

N-ChannelPowerMOSFET

FS

First Silicon Co., Ltd

HLDD30N10

N-ChannelEnhancementModePowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

HLDD30N10

N-ChannelEnhancementModePowerMOSFET

HUILIDAShenzhen hui lida electronic co., LTD

匯利達(dá)廣東匯利達(dá)半導(dǎo)體有限公司

HM30N10

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM30N10D

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM30N10K

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

LMAK30N10

N-ChannelEnhancementModePowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

P30N10

N-channel100V,0.02廓typ.,32ASTripFET??F7PowerMOSFETinaTO-220package

Description ThisN-channelPowerMOSFETutilizes STripFET?F7technologywithanenhanced trenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternal capacitanceandgatechargeforfasterandmore efficientswitching. Features ?AmongthelowestRDS(o

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB30N10

N-CHANNEL100V-0.06ohm-30A-D2PAKPOWERMOSTRANSISTOR

N-CHANNEL100V-0.06?-30A-D2PAKPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.06? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■APPLICATIONORIENTEDCHARACTERIZATION ■SURFACE-MOUNTINGD2PAK

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD30N10

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STU30N10

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

UTT30N10

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

UTT30N10

30A,100VN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

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更多30N10-VB供應(yīng)商 更新時(shí)間2025-1-6 10:37:00