零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SPIprotocolfortheSTPMC1meteringdevice | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
150VN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
BluetoothMultimediaSoC 1.1.Features ?Operationvoltagefrom2.8Vto5.2V ?Bluetooth4.1+EDRcompliant ?-90dBmsensitivityfor1Mbpsmodeand5dBmtransmitpower ?-107dBmsensitivityFMreceiver ?1-wireor4-wiresSD-cardinterface ?USB2.0hostanddevice ?Integrated90dBSNRADCandstereoDAC | BEKENBeken Corporation 博通集成博通集成電路(上海)股份有限公司 | BEKEN | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,5.7A,RDS(ON)=24mW@VGS=10V. RDS(ON)=36mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-89package. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,26A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=39mW@VGS=4.5V. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,7.8A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■SurfacemountPackage. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,7.8A,RDS(ON)=28mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,8.0A,RDS(ON)=25mW@VGS=10V. RDS(ON)=28mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=35mW@VGS=2.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,26A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=39mW@VGS=4.5V. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
Single/Dual/Triple/QuadDS3/E3/STS-1LIUs | MaximMaxim Integrated Products 美信美信半導體 | Maxim | ||
Single/Dual/Triple/QuadDS3/E3/STS-1LIUs GENERALDESCRIPTION TheDS3251(single),DS3252(dual),DS3253(triple),andDS3254(quad)lineinterfaceunits(LIUs)performthefunctionsnecessaryforinterfacingatthephysicallayertoDS3,E3,orSTS-1lines.EachLIUhasindependentreceiveandtransmitpathsandabuilt-injitterattenu | DallasDallas Semiconductor 亞德諾亞德諾半導體 | Dallas | ||
Single/Dual/Triple/QuadDS3/E3/STS-1LIUs | MaximMaxim Integrated Products 美信美信半導體 | Maxim | ||
Single/Dual/Triple/QuadDS3/E3/STS-1LIUs GENERALDESCRIPTION TheDS3251(single),DS3252(dual),DS3253(triple),andDS3254(quad)lineinterfaceunits(LIUs)performthefunctionsnecessaryforinterfacingatthephysicallayertoDS3,E3,orSTS-1lines.EachLIUhasindependentreceiveandtransmitpathsandabuilt-injitterattenu | DallasDallas Semiconductor 亞德諾亞德諾半導體 | Dallas | ||
原廠資料 | ETC | |||
Integrated4-,6-and8-channelpassiveEMI-filternetworkwithhigh-levelESDprotection | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
CABLEASSEMBLYRG393/UBNCMALETONMALE | PASTERNACK Pasternack Enterprises, Inc. | PASTERNACK | ||
CABLEASSEMBLYRG393/UBNCMALETONMALE(LEADFREE) | PASTERNACK Pasternack Enterprises, Inc. | PASTERNACK | ||
CMOSSystemReset Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25μAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25μAtyp.(whenVDD | MITSUMIMitsumi Electronics, Corp. 三美三美電機株式會社 | MITSUMI | ||
ICforCMOSSystemReset Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25μAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25μAtyp.(whenVDD | MITSUMIMitsumi Electronics, Corp. 三美三美電機株式會社 | MITSUMI | ||
Low-powersignalchainsolutionsbasedonC5505DSPforportablemedicalapplicationdevelopment | TITexas Instruments 德州儀器美國德州儀器公司 | TI |
詳細參數(shù)
- 型號:
3254-E
- 制造商:
Leviton Manufacturing Co
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Alpha |
22+ |
NA |
6878 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
EBM-PAPST |
2306+ |
NA |
6680 |
原裝正品公司現(xiàn)貨,實單來談 |
詢價 | ||
PAP |
23+ |
5000 |
原廠授權代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳 |
詢價 | |||
ebm-papst |
22+ |
2000 |
原裝現(xiàn)貨 支持實單 |
詢價 | |||
Microchip |
186 |
只做正品 |
詢價 | ||||
胡連 |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
胡連 |
24+ |
con |
2500 |
優(yōu)勢庫存,原裝正品 |
詢價 | ||
TE Connectivity AMP Connectors |
23+ |
原廠封裝 |
304 |
只做原裝只有原裝現(xiàn)貨實報 |
詢價 | ||
TE/泰科 |
24+ |
5310 |
原廠現(xiàn)貨渠道 |
詢價 | |||
TE |
新 |
17 |
全新原裝 貨期兩周 |
詢價 |
相關規(guī)格書
更多- 3254-GREEN-1000
- 3254-I
- 3255
- 3255.2001
- 325502
- 325505
- 325508
- 3-255-1
- 3255-25
- 32553
- 3255332
- 325534009-00
- 325535009-50
- 325542U025HL1
- 32556
- 325562U016HJ1
- 32558
- 32558R-LF1
- 3255A-0050
- 3255A-0250
- 325-5M-15
- 3256.0001
- 3256.0321
- 3256.0421
- 3256.0551
- 3256.0881
- 3256.25
- 32560
- 325600AO
- 325602
- 325603-2
- 325605
- 325622U025GT1
- 325632U035HT1
- 325-6371
- 325-6373
- 325-6375
- 32566
- 32-5665
- 3256A
- 3257
- 3257.0323
- 3257.0423
- 325703
- 325705B00000
相關庫存
更多- 3254-GY
- 3254-OR
- 32-55
- 32550
- 325503
- 3255-050
- 32551
- 325516
- 3255284-1
- 32-5533
- 325534-000
- 325534009-50
- 325542U010GJ1
- 325552U035HS1
- 325561000-50
- 32557
- 325582U6R3HE1
- 3255A-0025
- 3255A-0100
- 3255A-0500
- 3256
- 3256.0003
- 3256.0323
- 3256.0423
- 3256.0553
- 3256.0883
- 3256.25P
- 325600
- 325600BO
- 325603
- 32560-4A
- 32561
- 32563
- 3256371
- 3256373
- 3256375
- 325642U010JE1
- 3256604-1
- 3-256899-1
- 3256E
- 3257.0321
- 3257.0421
- 325702
- 325705
- 325705B00000G