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338RPFI

8-CHANNEL MULTIPLEXER

Maxwell

Maxwell Technologies

338RPFS

8-CHANNELMULTIPLEXER

Maxwell

Maxwell Technologies

AI338

a380KpixelsCCDareasensorforNTSC1/3inchvideocameras

A1PROS

A1 PROs co., Ltd.

ASW338

5-4000MHzMMICAmplifier

ASB

Advanced Semiconductor Business Inc.

ASW338

5~4000MHzMMICAmplifier

ASB

Advanced Semiconductor Business Inc.

BA338

MutedetectorIC

TheBA336,BA338andBA338LaremonolithicICsdesignedformutedetectionandtapeenddetection.Whenadurationofsilence(52dBmorless)exceedsthetimeconstantsetwithanexternalCRcircuit,asonggapisidentified,andafterthisaplungercontrolsignalisoutputduringapulsewhose

ROHMRohm

羅姆羅姆半導體集團

BA338L

MutedetectorIC

TheBA336,BA338andBA338LaremonolithicICsdesignedformutedetectionandtapeenddetection.Whenadurationofsilence(52dBmorless)exceedsthetimeconstantsetwithanexternalCRcircuit,asonggapisidentified,andafterthisaplungercontrolsignalisoutputduringapulsewhose

ROHMRohm

羅姆羅姆半導體集團

BC338

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES ?HighCurrent:IC=800mA. ?DCCurrentGain:hFE=100~630(VCE=1V,Ic=100mA). ?ForComplementarywithPNPtypeBC328.

KECKEC CORPORATION

KEC株式會社

BC338

SmallSignalTransistors(NPN)

FEATURES ?NPNSiliconEpitaxialPlanarTransistors forswitchingandamplifierapplications.Especially suitableforAF-driverstagesandlowpower outputstages. ?Thesetypesarealsoavailablesubdi videdintothreegroups-16,-25,and-40, accordingtotheirDCcurrent

GE

GE Industrial Company

BC338

SWITCHINGANDAMPLIFIERAPPLICATIONS

SwitchingandAmplifierApplications ?SuitableforAF-Driverstagesandlowpoweroutputstages ?ComplementtoBC327/BC328

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

BC338

AmplifierTransistor

TheLM337isanadjustable3–terminalnegativevoltageregulatorcapableofsupplyinginexcessof1.5Aoveranoutputvoltagerangeof–1.2Vto–37V.Thisvoltageregulatorisexceptionallyeasytouseandrequiresonlytwoexternalresistorstosettheoutputvoltage.Further,itemploysi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

BC338

NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications???

NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications

SEMTECH

Semtech Corporation

BC338

NPNSiliconAFTransistors(HighcurrentgainHighcollectorcurrentLowcollector-emittersaturationvoltage)

●Highcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC327,BC328(PNP)

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BC338

AmplifierTransistors

AmplifierTransistorsNPNSilicon Features ?Pb?FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半導體安森美半導體公司

BC338

SWITCHINGANDAMPLIFIERAPPLICATIONS

SWITCHINGANDAMPLIFIERAPPLICATIONS FEATURES *SuitableforAF-Driverstagesandlowpoweroutputstages *ComplementtoUTCBC327/328

UTCUnisonic Technologies

友順友順科技股份有限公司

BC338

Si-EpitaxialPlanarTransistors

GeneralPurposeSi-EpitaxialPlanarTransistors ?Powerdissipation625mW ?PlasticcaseTO-92(10D3) ?Weightapprox.0.18g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedinammopack

Diotec

Diotec Semiconductor

BC338

GeneralPurposeSi-EpitaxialPlanarTransistors

Diotec

Diotec Semiconductor

BC338

NPNPlastic-EncapsulateTransistors

FEATURES Powerdissipation PCM:0.625W（Tamb=25℃） Collectorcurrent ICM:0.8A Collector-basevoltage V(BR)CBO:BC33750V Operatingandstoragejunctiontemperaturerange TJ，Tstg:-55℃to+150℃

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

BC338

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

DCCOM

Dc Components

BC338

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications Thesetypesaresubdividedintothreegroups-16, -25and-40,accordingtotheirDCcurrentgain.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導體先之科半導體科技（東莞）有限公司

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ILL
23+
NA
658
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DIALOG
2016+
BGA
6000
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DIALOG
23+
BGA
30000
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DIALOG
21+
BGA
2450
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DIALOG
22+
BGA
25000
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DIALOG
1427+
BGA
2450
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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DIALOG
BGA
6000
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更多338RPFI供應商 更新時間2024-12-23 10:18:00

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