零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
35N60A | 35A 600V N-channel enhanced field effect transistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司 | YFWDIODE | |
N-ChannelEnhancementModeMOSFET | DACO DACO SEMICONDUCTOR CO.,LTD. | DACO | ||
N-ChannelEnhancementModeMOSFET | DACO DACO SEMICONDUCTOR CO.,LTD. | DACO | ||
600VN-ChannelMOSFET Description SuperFET?isFarichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Features ?650V@TJ=150°C ?Typ.RDS(on)=0.079? ?Ultralow | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=35A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelSuperFET?MOSFET Description SuperFET?MOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss, | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
DiscreteIGBT(High-SpeedVseries)600V/35A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
DiscreteIGBT(High-SpeedVseries)600V/35A 600V/35A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
N-ChannelEnhancementModeMOSFET | ICEMOS Icemos Technology | ICEMOS | ||
N-ChannelEnhancementModeMOSFET | MICROSS Micross Components | MICROSS | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤118m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
IGBTwithoptionalDiode HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard | IXYS IXYS Corporation | IXYS | ||
IGBTwithoptionalDiode HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard | IXYS IXYS Corporation | IXYS | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
EFSeriesPowerMOSFETWithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
ESeriesPowerMOSFET FEATURES ?Aspecificonresistance(m?-cm2)reductionof 25 ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
LX廠家 |
23+ |
TO-247S |
116502 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳 |
詢價 | ||
英飛凌 |
23+ |
TO-247 |
3000 |
全新原裝 |
詢價 | ||
2017+ |
TO247 |
6528 |
只做原裝正品假一賠十! |
詢價 | |||
TO-3PN |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價 | ||
Infineon |
2023+ |
TO-247 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
Infineon |
21+ |
TO-247 |
35210 |
一級代理/放心采購 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
TO-3P |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
TO-3P |
10000 |
公司只做原裝正品 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
TO-3P |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
英飛凌 |
TO-3P |
22+ |
6000 |
十年配單,只做原裝 |
詢價 |
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