BQ29732DSER

Marking：3U；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1Features ?Inputvoltagerangepack+:VSS–0.3Vto12V ?FETdrive: –CHGandDSGFETdriveoutput ?VoltagesensingacrossexternalFETsfor overcurrentprotection(OCP)iswithin±5mV (typical) ?Faultdetection –Overchargedetection(OVP) –Over-dischargedetection(UVP) –Charge

BQ29732DSET

Marking：3U；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1Features ?Inputvoltagerangepack+:VSS–0.3Vto12V ?FETdrive: –CHGandDSGFETdriveoutput ?VoltagesensingacrossexternalFETsfor overcurrentprotection(OCP)iswithin±5mV (typical) ?Faultdetection –Overchargedetection(OVP) –Over-dischargedetection(UVP) –Charge

PESD12VS1ULS

Marking：3U；Package：DFN1006BD-2；Unidirectional ESD protection diode

1.Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotectonesignalline fromthedamagecausedbyESDandothertransients.Thedeviceishousedinaleadlessultra smallDFN1006BD-2(SOD882BD)Surface-MountedDevice(SMD)plasticpackagewithsi

PESD4USB3UTBR-Q

Marking：3U；Package：DFN2510A-10；ESD protection for high-speed interfaces

1.Generaldescription ThisunidirectionalESDprotectiondeviceisdesignedtoprotecthigh-speedinterfacessuchas SuperSpeedUSB3.2at10Gbps,HDMI,DisplayPort,externalSerialAdvancedTechnology Attachment(eSATA),LowVoltageDifferentialSignaling(LVDS),andGigabitMultimediaSeria

PMPB50ENE

Marking：3U；Package：SOT1220；30 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessmediumpower DFN2020MD-6(SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits ?ExtendedtemperaturerangeTj=175°C ?Smallandleadless

PSD03-LF-T7

Marking：3U；Package：SOD-323；1-Line Unl-directional TVS Diode

Features *300Wpeakpulsepower(8/20ps) *Protectsonedataorpowerline +Ultralowleakage:nAlevel +Operatingvoltage:3.3V +Ultralowclampingvoltage +Complieswithfollowingstandards: —IEC61000-4-2(ESD)immunitytest Airdischarge:+30kV Contactdischarge:+30kV —IEC6100

RB481KFH

Marking：3U；Package：SOT-343；Schottky Barrier Diode

●Features Highreliability Smallmoldtype SuperLowVF ●Application Smallcurrentrectification

RB481Y

Marking：3U；Package：EMD4；Schottky barrier diode

Schottkybarrierdiode Features 1)UltraSmallpowermoldtype.(EMD4) 2)LowVF 3)Highreliability. Applications Lowcurrentrectification Construction Siliconepitaxialplanar

TDZ13J

Marking：3U；Package：SOD323F；Single Zener diodes

1.1Generaldescription General-purposeZenerdiodesinaSOD323F(SC-90)verysmallandflatlead Surface-MountedDevice(SMD)plasticpackage. 1.2Featuresandbenefits 1.3Applications ?Generalregulationfunctions ?Non-repetitivepeakreversepower dissipation:?180W ?Lowdifferen

UCLAMP3301D

Marking：3U；Package：SOD-323；1-Line Unl-directional TVS Diode

Features *300Wpeakpulsepower8/20ps) +Protectsonedataorpowerline +Ulalowleakage:nAlevel +Operatingvoltage:5V +Ultralowclampingvotage +Complieswithfollowingstandards: ~IEC61000-4-2(ESD)immunitytest Aldischarge:$30kV Contactdischarge:+30kV ~IEC61000-4-5(