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4105-A

包裝:散裝 類別:標簽,標志,護欄,標識 標簽 描述:4105-A OXYGEN/YEL/STY A

Brady Corporation

Brady Corporation

Brady Corporation

4105-A

包裝:散裝 類別:標簽,標志,護欄,標識 標簽 描述:4105-A OXYGEN/YEL/STY A

Brady Corporation

Brady Corporation

Brady Corporation

ACTR4105

trueone-port,surface-acoustic-wave(SAW)resonator

ACT

Advanced Crystal Technology

AN4105

DesignConsiderationsforSwitchedModePowerSuppliesUsingAFairchildPowerSwitch(FPS)inaFlybackConverter

Introduction Flybackswitchedmodepowersupplies(SMPS)areamongthemostfrequentlyusedpowercircuitsinhouseholdandconsumerelectronics.ThebasicfunctionofanSMPSistosupplyregulatedpowertotheloadonthesecondary,oroutputside.AnSMPStypicallyincorporatesapowertransfo

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

AUIRFR4105

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105

AdvancedPlanarTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

AUIRFR4105

AdvancedPlanarTechnology

AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesign

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRFR4105TR

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105TRL

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105TRR

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105Z

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFR4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive

KERSEMI

Kersemi Electronic Co., Ltd.

AUIRFR4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRFR4105ZTR

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFR4105ZTRL

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFR4105ZTRL

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRFR4105ZTRR

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFU4105Z

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFU4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive

KERSEMI

Kersemi Electronic Co., Ltd.

AUIRFU4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    4105-A

  • 制造商:

    Brady Corporation

  • 類別:

    標簽,標志,護欄,標識 > 標簽

  • 包裝:

    散裝

  • 描述:

    4105-A OXYGEN/YEL/STY A

供應商型號品牌批號封裝庫存備注價格
LAIRD
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AT
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軸向 孔眼 - 鉤形引線
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POWER
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SOP16
16000
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POWER
23+
SOP16
6000
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VARTA
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
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更多4105-A供應商 更新時間2025-1-9 16:54:00