AZ4715-01F.R7G

Marking：46；Package：DFN2020P3E；Transient Voltage Suppressing Device For ESD/Transient/Surge Protection

Features
ESDprotectionforonelinewithuni-directional
Providetransientprotectionforonelineto IEC61000-4-2(ESD)±30kV(air/contact) IEC61000-4-4(EFT)80A(5/50ns) IEC61000-4-5(Lightning)170A(8/20ms)
Suitablefor,15Vandbelow,operatingvoltage applications
2.0mm

BAS40-06

Marking：46；Package：SOT-23；Surface mount Schottky-Barrier Single-/ Double-Diodes

Features Veryhighswitchingspeed Lowjunctioncapacitance Lowleakagecurrent ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing,High-speed switching,Polarityprotection Commercialgrade1) MechanicalData1) Tapedandre

BAS40-06

Marking：46；Package：SOT-23；Surface Mount Schottky Barrier Diode 200 mWatt

DESCRIPTION VariousconfigurationsofSchottkybarrier’sdiodesinSOT-23packageareprovidedforgeneral-purposeuseinhigh-speedswitching,mixersanddetectorapplications.Theymayalsobeusedforsignalintegrityandcounteractthetransmission-lineeffectswith(PC)boardtrancesbycla

BAS40-06

Marking：46；Package：SOT23；General-purpose dual Schottky diode

1.Generaldescription General-purposedualSchottkydiodeinasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits ?Highswitchingspeed ?Lowleakagecurrent ?Highbreakdownvoltage ?Lowcapacitance ?AEC-Q101qualified 3.Applications ?

BAS40-06

Marking：46；Package：SOT-23；Surface Mount Schottky Barrier Diodes

Features ●LowTurn–onVoltage ●FastSwitching ●PNJunctionGuardRingforTransientandESD ??Protection Applications ??Fastswitchesinthickandthinfilmcircuits

BAS40-06

Marking：46；Package：SOT-23；SCHOTTKY BARRIER DIODE

FEATURES LowForwardVoltage FastSwitching

BAS40-06T

Marking：46；Package：SOT-523；SOT-523 Plastic-Encapsulate Diodes

FEATURES Lowforwardvoltage Fastswitching

CDBT-40A-HF

Marking：46；Package：SOT-23；Small Signal Schottky Diodes

Features -Designformountingonsmallsurface. -Highspeedswitchingapplication,circuit protection. -Lowforwardvoltagedrop.

DMN2451UFB4-7B

Marking：46；Package：X2-DFN1006-3；N-CHANNEL ENHANCEMENT MODE MOSFET

Features ?Footprintofjust0.6mm2–ThirteenTimesSmallerthanSOT23 ?0.4mmProfile–IdealforLowProfileApplications ?LowGateThresholdVoltage ?FastSwitchingSpeed ?ESDProtectedGate ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”

DMN2451UFB4-7R

Marking：46；Package：X2-DFN1006-3；N-CHANNEL ENHANCEMENT MODE MOSFET

Features ?Footprintofjust0.6mm2–ThirteenTimesSmallerthanSOT23 ?0.4mmProfile–IdealforLowProfileApplications ?LowGateThresholdVoltage ?FastSwitchingSpeed ?ESDProtectedGate ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”