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BC846S

Marking:4F;Package:TSSOP6;NPN general purpose double transistor

Featuresandbenefits ?Twotransistorsinonepackage ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors

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BC846S-Q

Marking:4F;Package:TSSOP6;NPN general purpose double transistor

Featuresandbenefits ?Twotransistorsinonepackage ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC860B

Marking:4F;Package:SOT23;PNP general purpose transistors

FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.45V).

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC860BW

Marking:4F;Package:SOT323;PNP general purpose transistors

FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.45V).

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BZX884S-C20

Marking:4F;Package:DFN1006BD-2;Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BZX884S-C20-Q

Marking:4F;Package:DFN1006BD-2;Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

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安世安世半導(dǎo)體(中國(guó))有限公司

MM1Z3V3

Marking:4F;Silicon Planar Zener Diodes

FEATURES ?Totalpowerdissipation:Max.500mW. ?Widezenerreversevoltagerange2.0Vto75V. ?Smallplasticpackagesuitableforsurfacemounteddesign. ?Toleranceapproximately±5

JUXINGGuangdong Juxing Electronics Technology Co., Ltd.

廣東鉅興電子廣東鉅興電子科技有限公司

PIMP31

Marking:4F;Package:SC-74;50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 1 kΩ, R2 = 10 kΩ

1.Generaldescription PNP/PNPResistor-EquippeddoubleTransistor(RET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PIMN31 NPN/PNPcomplement:PIMC31 2.Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ?

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PIMP31-Q

Marking:4F;Package:SC-74;50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 1 kΩ, R2 = 10 kΩ

1.Generaldescription PNP/PNPResistor-EquippeddoubleTransistor(RET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PIMN31 NPN/PNPcomplement:PIMC31 2.Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ?

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安世安世半導(dǎo)體(中國(guó))有限公司

PMBD353

Marking:4F;Package:SOT23;Schottky barrier double diode

FEATURES ?Lowforwardvoltage ?SmallSMDpackage ?Lowcapacitance. APPLICATIONS ?UHFmixer ?Samplingcircuits ?Modulators ?Phasedetection. DESCRIPTION PlanarSchottkybarrierdoublediodeinaSOT23smallplasticSMDpackage.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    4F

  • 制造商:

    LG Corporation

  • 功能描述:

    O.S BUTTON FD-4008

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5323
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23+
SOP8
1173
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TO220/
1690
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24+
DIP8
5000
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FERROXCUBE
23+
NA
19960
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FORD
24903
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23+
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313
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45380
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黑金剛
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10561
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更多4F供應(yīng)商 更新時(shí)間2025-3-12 11:04:00