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2SA2206

Marking：4K；Package：PW-Mini；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

AD5110BCPZ80-1-RL7

Marking：4K；Package：LFCSP；Single-Channel, 128-/64-/32-Position, I2C, 8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES ?Nominalresistortoleranceerror:±8%maximum ?Wipercurrent:±6mA ?Rheostatmodetemperaturecoefficient:35ppm/°C ?Lowpowerconsumption:2.5μAmax@2.7Vand125°C ?Widebandwidth:4MHz(5kΩoption) ?Power-onEEPROMrefreshtime

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

BZX884S-C2V4

Marking：4K；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BZX884S-C2V4-Q

Marking：4K；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

MM1Z4V3

Marking：4K；Silicon Planar Zener Diodes

FEATURES ?Totalpowerdissipation:Max.500mW. ?Widezenerreversevoltagerange2.0Vto75V. ?Smallplasticpackagesuitableforsurfacemounteddesign. ?Toleranceapproximately±5

JUXINGGuangdong Juxing Electronics Technology Co., Ltd.

廣東鉅興電子廣東鉅興電子科技有限公司

PMN15ENE

Marking：4K；Package：SOT457；30 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT457Surface-Mounted Device(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?ExtendedtemperaturerangeTj=175°C ?TrenchMOSFETtechnology

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PMPB20XPEA

Marking：4K；Package：SOT1220；20 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessmediumpower DFN2020MD-6(SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits ?Lowthresholdvoltage ?TrenchMOSFETtechnology ?Sidewe

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BAP64W-04

Marking：4K；Package：SOT-23；Small Signal General Purpose PiN Diode

SECELECTRONICS

SEC Electronics Inc.

MM1Z4V3

Marking：4K；Package：SOD-123；Zener Diodes

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

MM1Z4V3

Marking：4K；Package：SOD-123；Silicon Planar Zener Diodes

BYTESONICBytesonic Electronics Co., Ltd.

松浩電子松浩電子股份有限公司

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更多4K供應(yīng)商 更新時間2025-3-1 14:30:00

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