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2SC6125

Marking:4L;Package:PW-Mini;Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

AD5110BCPZ80-500R7

Marking:4L;Package:LFCSP;Single-Channel, 128-/64-/32-Position, I2C, 8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES ?Nominalresistortoleranceerror:±8%maximum ?Wipercurrent:±6mA ?Rheostatmodetemperaturecoefficient:35ppm/°C ?Lowpowerconsumption:2.5μAmax@2.7Vand125°C ?Widebandwidth:4MHz(5kΩoption) ?Power-onEEPROMrefreshtime

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD5110BCPZ80-RL7

Marking:4L;Package:LFCSP;Single-Channel, 128-/64-/32-Position, I2C, 8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES ?Nominalresistortoleranceerror:±8%maximum ?Wipercurrent:±6mA ?Rheostatmodetemperaturecoefficient:35ppm/°C ?Lowpowerconsumption:2.5μAmax@2.7Vand125°C ?Widebandwidth:4MHz(5kΩoption) ?Power-onEEPROMrefreshtime

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

BC858CLT3G

Marking:4L;Package:SOT-23;General Purpose Transistors

GeneralPurposeTransistors PNPSilicon ?MoistureSensitivityLevel:1 ?ESDRating–HumanBodyModel:>4000V –MachineModel:>400V ?Wedeclarethatthematerialofproductcompliancewith RoHSrequirements.

FS

First Silicon Co., Ltd

BD5229NVX

Marking:4l;Package:SSON004R1010;Free Time Delay Setting CMOS Voltage Detector (Reset) IC

GeneralDescription ROHM'sFreeTimeDelaySettingCMOSVoltage DetectorICsarehighlyaccurate,withultra-lowcurrent consumptionfeaturethatusesCMOSprocess.Delay timesettingcanbecontrolbyanexternalcapacitor.The lineupincludesN-channelopendrainoutput(BD52xx NVX-2C)and

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BZX884S-C2V7

Marking:4L;Package:DFN1006BD-2;Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BZX884S-C2V7-Q

Marking:4L;Package:DFN1006BD-2;Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

ESD3.3V88D-LA

Marking:4L;Package:DFN1006;Transient Voltage Suppressors for ESD Protection

Features 99WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsOneUnidirectionalI/OLine Lowclampingvoltage LowCapacitance Workingvoltages:3.3V IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-5(LIGHTING)9A(8/20μs) IEC61000-4-2(ESD)±17kV(airdischarge) ±15kV(contactdischarge)

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

ESD3.3V88DS-LA

Marking:4L;Package:DFN1006;Transient Voltage Suppressors for ESD Protection

Features MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 100WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsOneUnidirectionalI/OLine Lowclampingvoltage Workingvoltage:3.3V Lowleakagecurrent IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-5(LIGHTING)9A(8/20μs) IEC6100

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

PMN37ENE

Marking:4L;Package:SOT457;60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT457Surface-Mounted Device(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?ExtendedtemperaturerangeTj=175°C ?TrenchMOSFETtechnology

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    4L

  • 制造商:

    UNBRANDED

  • 功能描述:

    SWITCH MODE POWER SUPPLY*NIC*

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更多4L供應(yīng)商 更新時(shí)間2025-1-29 17:27:00