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RMP4N60IP

Marking：4N60；Package：TO-251；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest

RECTRON

Rectron Semiconductor

RMP4N60LD

Marking：4N60；Package：TO-252；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest

RECTRON

Rectron Semiconductor

RMP4N60T2

Marking：4N60；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest

RECTRON

Rectron Semiconductor

RMP4N60TI

Marking：4N60；Package：TO-220F；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest

RECTRON

Rectron Semiconductor

SVF4N60CADTR

Marking：4N60CAD；Package：TO-252-2L；4A, 600V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF4N60CAF/K/D/T/MN/MJisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailoredto minimizeon-stateres

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF4N60CAMJ

Marking：4N60CAMJ；Package：TO-251J-3L；4A, 600V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF4N60CAF/K/D/T/MN/MJisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailoredto minimizeon-stateres

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF4N60CAMN

Marking：4N60CAMN；Package：TO-251N-3L；4A, 600V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF4N60CAF/K/D/T/MN/MJisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailoredto minimizeon-stateres

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

YFW4N60A1

Marking：4N60AT；Package：TO-220AB；4A 600V N-channel enhanced field effect transistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

YFW4N60A2

Marking：4N60AF；Package：TO-220F；4A 600V N-channel enhanced field effect transistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

YFW4N60A3

Marking：4N60AS；Package：TO-263；4A 600V N-channel enhanced field effect transistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

詳細(xì)參數(shù)

  • 型號：

    4N60

  • 制造商：

    UTC-IC

  • 制造商全稱：

    UTC-IC

  • 功能描述：

    4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
華晶
23+
TO-220F
5000
原裝現(xiàn)貨 假一賠十
 詢價
華晶
14+
TO-251
5000
全新原裝
 詢價
FSC仙童
23+
TO-220/252/251
53000
一級分銷商
 詢價
FCS
2024+
TO-252
32560
原裝優(yōu)勢絕對有貨
 詢價
ON/安森美
2410+
DIP
22000
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
 詢價
中性
2024
TO-252
13500
16余年資質(zhì) 絕對原盒原盤代理渠道 更多數(shù)量
 詢價
仙童
24+
9000
詢價
FAI
13+
T0252
2500
原裝現(xiàn)貨價格有優(yōu)勢量大可以發(fā)貨
 詢價
UTC
23+
TO252
9526
詢價
SEMIHOW
2339+
TO220
5642
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
更多4N60供應(yīng)商 更新時間2025-2-4 9:20:00

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