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509780015Q65114A0085

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

509780018

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

509780018Q65114A0086

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

509780022

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

509780022Q65114A0087

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

509780024

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

509780024Q65113A5399

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

509780027

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

509780027Q65113A5403

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

509780029

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    509

  • 制造商：

    MG Chemicals

  • 類(lèi)別：

    原型開(kāi)發(fā)，制造品 > 無(wú)孔原型板

  • 系列：

    500

  • 包裝：

    散裝

  • 原型板類(lèi)型：

    包銅，無(wú)涂層

  • 大小 / 尺寸：

    6.00" x 6.00"（152.4mm x 152.4mm）

  • 板厚度：

    0.062"（1.57mm）1/16"

  • 材料：

    單面包銅 FR4，1 盎司

  • 描述：

    PROTO BOARD COPPER CLAD 6\

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FAIRCHILD
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OTTOHEIL
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6523
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REGALELECTRONICSINC
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4169
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更多509供應(yīng)商 更新時(shí)間2025-4-5 16:06:00

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