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509780029Q65113A5404

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

509780031

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

509780031Q65113A5406

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

509780034

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

509780034Q65113A5408

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

509780036

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

509780036Q65113A5409

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

509780037

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

509780037Q65113A5069

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

509780038

1/2.7” 2.2MP NIR Enhanced Global Shutter Image

Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

產(chǎn)品屬性

  • 產(chǎn)品編號:

    509

  • 制造商:

    MG Chemicals

  • 類別:

    原型開發(fā),制造品 > 無孔原型板

  • 系列:

    500

  • 包裝:

    散裝

  • 原型板類型:

    包銅,無涂層

  • 大小 / 尺寸:

    6.00" x 6.00"(152.4mm x 152.4mm)

  • 板厚度:

    0.062"(1.57mm)1/16"

  • 材料:

    單面包銅 FR4,1 盎司

  • 描述:

    PROTO BOARD COPPER CLAD 6\

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