零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
MOSFET:P-ChannelSiliconMOSFETSBD:SchottkyBarrierDiode MOSFET:P-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features ?CompositetypecontainingaP-ChannelMOSFET(MCH3312)andaSchottkyBarrierDiode(SB1003M3),facilitatinghigh-densitymounting. ?[MOS] ?LowON-resistance ?Ultrahigh-speedswitching ?4Vdrive ?[SBD] | SANYOSanyo 三洋三洋電機株式會社 | SANYO | ||
PowerMOSFET(Vdss=20V) Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua | IRF International Rectifier | IRF | ||
High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
CMOSINTEGRATEDCIRCUIT | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
Four-BitSingle-ChipMicrocontrollerwithOn-ChipLCDDriversforSmall-ScaleControlinMedium-SpeedApplications Overview TheLC5852Nisahigh-performancefour-bitsingle-chipbuilt-inLCDdrivermicroprocessorthatprovidesavarietyofattractivefeaturesincludinglow-voltageoperationandlowpowerdissipation.TheLC5852NwasdevelopedasanupwardlycompatibleversionoftheLC5851NandprovidesaRO | SANYOSanyo 三洋三洋電機株式會社 | SANYO | ||
Dual,8-Bit,165Msps,Current-OutputDAC | MaximMaxim Integrated Products 美信美信半導(dǎo)體 | Maxim | ||
Dual,10-Bit,165Msps,Current-OutputDAC | MaximMaxim Integrated Products 美信美信半導(dǎo)體 | Maxim |
詳細(xì)參數(shù)
- 型號:
5852-II
- 制造商:
Brady Corporation
- 功能描述:
STRONG BLACK LIQUOR BLACK/ORANGE
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Alpha |
22+ |
NA |
69 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
AlphaWire |
新 |
10 |
全新原裝 貨期兩周 |
詢價 | |||
Alpha Wire |
2022+ |
6 |
全新原裝 貨期兩周 |
詢價 | |||
Alpha Wire |
18415+ |
con |
67 |
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格 |
詢價 | ||
Alpha Wire |
22+ |
17500 |
原裝現(xiàn)貨 支持實單 |
詢價 | |||
SSC |
23+ |
SOT23-8 |
15000 |
全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
臺產(chǎn) |
2023+ |
DFN2X3-8L |
8700 |
原裝現(xiàn)貨 |
詢價 | ||
TE/泰科 |
2420+ |
/ |
204541 |
一級代理,原裝正品! |
詢價 | ||
TE/泰科 |
24+ |
19373 |
原廠現(xiàn)貨渠道 |
詢價 |
相關(guān)規(guī)格書
更多- 5852S
- 5852-WHT-1000FT
- 5853 BK001
- 5853 BL001
- 5853 BR001
- 5853 GR001
- 58530-2
- 58530-3
- 5853-1 WH005
- 5853-10VI005
- 5853111
- 5853113
- 5853115
- 58531-2
- 585-3121
- 585-3123
- 585-31X3
- 58532
- 5853-2 30M
- 58532-1
- 585-3211
- 585-3213
- 585-3215
- 5853221
- 5853223
- 5853225
- 5853-2BK005
- 585-32X5
- 5853-3 RD005
- 5853311
- 5853313
- 5853315
- 5853321
- 5853323
- 5853325
- 585-33X3
- 5853411
- 5853413
- 5853415
- 5853421
- 5853423
- 585-3425
- 585-34X3
- 58535
- 5853-5 YL005
相關(guān)庫存
更多- 5852VI001
- 5853
- 5853 BK005
- 5853 BL005
- 5853 BR005
- 58530-1
- 585-302A
- 585306-000
- 58-53-103-24
- 58531-1
- 585-3111
- 585-3113
- 585-3115
- 5853121
- 5853123
- 5853125
- 585-31X5
- 5853-2
- 5853-2 BK005
- 5853211
- 5853213
- 5853215
- 58532-2
- 585-3221
- 585-3223
- 585-3225
- 585-32X3
- 5853-3 30M
- 58533-1
- 585-3311
- 585-3313
- 585-3315
- 585-3321
- 585-3323
- 585-3325
- 585-33X5
- 585-3411
- 585-3413
- 585-3415
- 585-3421
- 585-3423
- 5853-4GR005
- 585-34X5
- 5853-5 30M
- 58535-1