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CPH5852

MOSFET:P-ChannelSiliconMOSFETSBD:SchottkyBarrierDiode

MOSFET:P-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features ?CompositetypecontainingaP-ChannelMOSFET(MCH3312)andaSchottkyBarrierDiode(SB1003M3),facilitatinghigh-densitymounting. ?[MOS] ?LowON-resistance ?Ultrahigh-speedswitching ?4Vdrive ?[SBD]

SANYOSanyo

三洋三洋電機株式會社

IRF5852

PowerMOSFET(Vdss=20V)

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852PBF

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852TR

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852TRPBF

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

ISO5852S

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

ISO5852S

High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures

TITexas Instruments

德州儀器美國德州儀器公司

ISO5852S

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

ISO5852SDW

High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures

TITexas Instruments

德州儀器美國德州儀器公司

ISO5852SDWR

High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures

TITexas Instruments

德州儀器美國德州儀器公司

ISO5852S-EP

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

ISO5852S-EP

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

ISO5852SMDWREP

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

ISO5852SMDWREP

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

KS5852

CMOSINTEGRATEDCIRCUIT

SamsungSamsung semiconductor

三星三星半導(dǎo)體

LC5852N

Four-BitSingle-ChipMicrocontrollerwithOn-ChipLCDDriversforSmall-ScaleControlinMedium-SpeedApplications

Overview TheLC5852Nisahigh-performancefour-bitsingle-chipbuilt-inLCDdrivermicroprocessorthatprovidesavarietyofattractivefeaturesincludinglow-voltageoperationandlowpowerdissipation.TheLC5852NwasdevelopedasanupwardlycompatibleversionoftheLC5851NandprovidesaRO

SANYOSanyo

三洋三洋電機株式會社

MAX5852

Dual,8-Bit,165Msps,Current-OutputDAC

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX5852

Dual,10-Bit,165Msps,Current-OutputDAC

MaximMaxim Integrated Products

美信美信半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    5852-II

  • 制造商:

    Brady Corporation

  • 功能描述:

    STRONG BLACK LIQUOR BLACK/ORANGE

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