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1PS3C02CCW

Marking:5N;Package:SOT-323;Silicon Epitaxial Planar PIN Diode

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技(東莞)有限公司

744760051A

Marking:5N1;WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

744760056A

Marking:5N6;WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

744760056GA

Marking:5N6;WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

74AUP1G16GF

Marking:5N;Package:XSON6;Low-power buffer

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

74AUP1G16GM

Marking:5N;Package:XSON6;Low-power buffer

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

74AUP1G16GW

Marking:5N;Package:TSSOP5;Low-power buffer

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BZX8850S-C1V8

Marking:5N;Package:DFN1006BD-2;Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanultrasmallSOD882BD(DFN1006BD-2)leadless Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Totalpowerdissipation:≤365mW ?Toleranceseries:approximately±5 ?Workin

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BZX8850S-C1V8-Q

Marking:5N;Package:DFN1006BD-2;Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanultrasmallSOD882BD(DFN1006BD-2)leadless Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Totalpowerdissipation:≤365mW ?Toleranceseries:approximately±5 ?Workin

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

IAUA170N10S5N031

Marking:5N10031;Package:PG-HSOF-5-4;OptiMOS??power MOSFET for automotive applications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUA180N10S5N029

Marking:5N10029;Package:PG-HSOF-5-4;Automotive MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUA210N10S5N024

Marking:5N10024;Package:PG-HSOF-5-4;Automotive MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUA250N08S5N018

Marking:5N08018;Package:PG-HSOF-5-4;Automotive MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUC100N10S5L040

Marking:5N10L040;Package:PG-TDSON-8;OptiMOSTM-5 Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUC100N10S5L054

Marking:5N10L054;Package:PG-TDSON-8-34;OptiMOS??5 Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUC100N10S5N040

Marking:5N1N040;Package:PG-TDSON-8;OptiMOSTM-5 Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUC120N06S5L011

Marking:5N06L011;Package:PG-TDSON-8-53;OptiMOS?-5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–LogicLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUC120N06S5L015

Marking:5N06L015;Package:PG-TDSON-8-43;OptiMOS?-5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–LogicLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUC120N06S5L022

Marking:5N06L022;Package:PG-TDSON-8-34;OptiMOS?-5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–LogicLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUC120N06S5L032

Marking:5N06L032;Package:PG-TDSON-8-34;OptiMOS??5 Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    5N

  • 制造商:

    BICC GENERAL CABLE INDUST

  • 功能描述:

    #6 WELDING CABLE

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
N/A
1996
1500
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
詢價(jià)
15+
TO220
50000
全新原裝
詢價(jià)
IR
23+
TO220F
18689
詢價(jià)
TO220/
2890
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
詢價(jià)
ST
23+
SMD
23349
全新原裝現(xiàn)貨,專業(yè)代理熱賣
詢價(jià)
24+
TSSOP-8
3090
詢價(jià)
ST
2339+
TSSOP8
9652
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
詢價(jià)
AAT
24+
TO-220/F
50000
原裝現(xiàn)貨假一罰十
詢價(jià)
ANALOGIC TECH
16+
TDFN33-14
8000
原裝現(xiàn)貨請(qǐng)來電咨詢
詢價(jià)
TOYO
23+
DIP
5000
原裝正品,假一罰十
詢價(jià)
更多5N供應(yīng)商 更新時(shí)間2025-1-16 18:18:00