744760051A

Marking：5N1；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

IAUA170N10S5N031

Marking：5N10031；Package：PG-HSOF-5-4；OptiMOS??power MOSFET for automotive applications

IAUA180N10S5N029

Marking：5N10029；Package：PG-HSOF-5-4；Automotive MOSFET

IAUA210N10S5N024

Marking：5N10024；Package：PG-HSOF-5-4；Automotive MOSFET

IAUC100N10S5L040

Marking：5N10L040；Package：PG-TDSON-8；OptiMOSTM-5 Power-Transistor

IAUC100N10S5L054

Marking：5N10L054；Package：PG-TDSON-8-34；OptiMOS??5 Power Transistor

IAUC100N10S5N040

Marking：5N1N040；Package：PG-TDSON-8；OptiMOSTM-5 Power-Transistor

IAUC24N10S5L300

Marking：5N10L300；Package：PG-TDSON-8；OptiMOSTM-5 Power-Transistor

IAUC26N10S5L245

Marking：5N10L245；Package：PG-TDSON-8-33；OptiMOS??5 Power Transistor

IAUC60N10S5L110

Marking：5N10L110；Package：PG-TDSON-8-33；OptiMOS?-5 Power Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel-Enhancementmode-LogicLevel ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?100Avalanchetested

IAUC90N10S5N062

Marking：5N10N062；Package：PG-TDSON-8；OptiMOSTM-5 Power-Transistor

IAUMN10S5N016G

Marking：5N10N016；Package：PG-HSOG-4-1；Automotive MOSFET OptiMOS? 5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–NormalLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL2upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100%Avalan

IAUMN10S5N017G

Marking：5N10N017；Package：PG-HSOG-4-1；Automotive MOSFET OptiMOS? 5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–NormalLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL2upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100%Avalan

IAUS260N10S5N019T

Marking：5N10019；Package：PG-HDSOP-16-2；OptiMOS??5 Power-Transistor

IAUS300N10S5N015T

Marking：5N10015；Package：PG-HDSOP-16-2；OptiMOS??5 Power-Transistor

IAUT150N10S5N035

Marking：5N10035；Package：P/G-HSOF-8-1；OptiMOS??5 Power-Transistor

IAUT260N10S5N019

Marking：5N10019；Package：P/G-HSOF-8-1；OptiMOS??5 Power-Transistor

IAUT300N10S5N014

Marking：5N10014；Package：PG-HSOF-8-1；OptiMOS?-5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–NormalLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?

IAUT300N10S5N015

Marking：5N10015；Package：P/G-HSOF-8-1；OptiMOS??5 Power-Transistor

IAUTN12S5N017

Marking：5N12N017；Package：PG-HSOF-8-1；OptiMOS? 5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–enhancementmode–normallevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100%avalan