首頁 >65R015M2>絲印列表
零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
Marking:65R015M2;Package:PG-TO263-7;MOSFET CoolSiCa MOSFET 650 V G2 Features ?Ultra-lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ? | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking:65R015M2;Package:PG-HDSOP-22;CoolSiC? MOSFET 650 V G2 Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ? | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking:65R015M2;Package:PG-HDSOP-16;SiC MOSFET CoolSiC? MOSFET 650 V G2 Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ? | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking:65R015M2;Package:PG-HSOF-8;CoolSiC? MOSFET 650 V G2 Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ? | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking:65R015M2;Package:PG-TO247-3;MOSFET CoolSiCa MOSFET 650 V G2 Features ?Ultra-lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ? | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking:65R015M2;Package:PG-TO247-4;MOSFET CoolSiCa MOSFET 650 V G2 Features ?Ultra-lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ? | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
PHILIPS |
23+ |
DIP |
1436 |
特價(jià)庫存 |
詢價(jià) | ||
PHILIPS |
24+ |
DIP |
250 |
詢價(jià) | |||
PHI |
1738+ |
DIP |
8529 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價(jià) | ||
PHILIPS/飛利浦 |
2021+ |
DIP |
100500 |
一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
PHI/S |
23+ |
DIP16 |
5000 |
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道??商峁┐罅繋齑?詳 |
詢價(jià) | ||
NXP |
2023+ |
DIP16 |
8700 |
原裝現(xiàn)貨 |
詢價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO-263 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
Infineon/英飛凌 |
TO-263 |
22+ |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
Infineon/英飛凌 |
22+ |
TO-263 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
INFINEON |
23+ |
TO-263 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) |
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