Description

The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor.

The devices are packaged in an 8-pin DIP package and available in wide-lead spacing and SMD option.

Features

? High speed 1Mbit/s

? High isolation voltage between input and output (Viso=5000 Vrms )

? Guaranteed performance from 0°C to 70°C

? Wide operating temperature range of -55°C to 100°C

? Pb free and RoHS compliant

? UL approved (No. 214129)

? VDE approved (No. 132249)

? SEMKO approved

? NEMKO approved

? DEMKO approved

? FIMKO approved

? CSA approved (No. 2037145)

Applications

? Line receivers

? Telecommunication equipments

? Power transistor isolation in motor drives

? Replacement for low speed phototransistor photo couplers

? Feedback loop in switch-mode power supplies

? Home appliances

? High speed logic ground isolation