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    70N10
    Fast Switching Speed
    ISCInchange Semiconductor Company Limited
    無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司
    

    CEB70N10L
    N-ChannelEnhancementModeFieldEffectTransistor
    
FEATURES
100V,69A,RDS(ON)=11mW@VGS=10V
SuperhighdensecelldesignforextremelylowRDS(ON).
Highpowerandcurrenthandingcapability.
TO-220&TO-263package.
RoHScompliant.
RDS(ON)=15mW@VGS=4.5V
    CET-MOSCET-MOS Technology Corp.
    華瑞華瑞功率電子股份有限公司
    

    CEP70N10L
    N-ChannelEnhancementModeFieldEffectTransistor
    
FEATURES
100V,69A,RDS(ON)=11mW@VGS=10V
SuperhighdensecelldesignforextremelylowRDS(ON).
Highpowerandcurrenthandingcapability.
TO-220&TO-263package.
RoHScompliant.
RDS(ON)=15mW@VGS=4.5V
    CET-MOSCET-MOS Technology Corp.
    華瑞華瑞功率電子股份有限公司
    

    FQA70N10
    100VN-ChannelMOSFET
    
GeneralDescription
TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.
Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths
    FairchildFairchild Semiconductor
    仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司
    

    FQA70N10
    iscN-ChannelMOSFETTransistor
    
FEATURES
·DrainCurrent–ID=70A@TC=25℃
·DrainSourceVoltage-
:VDSS=100V(Min)
·StaticDrain-SourceOn-Resistance
:RDS(on)=23mΩ(Max)@VGS=10V
·100avalanchetested
·MinimumLot-to-Lotvariationsforrobustdevice
performanceandreliableoperation
DESCRIPTION
·motordrive,DC-DCconv
    ISCInchange Semiconductor Company Limited
    無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司
    

    FQAF70N10
    iscN-ChannelMOSFETTransistor
    
FEATURES
·DrainCurrent–ID=45A@TC=25℃
·DrainSourceVoltage-
:VDSS=100V(Min)
·StaticDrain-SourceOn-Resistance
:RDS(on)=0.023Ω(Max)@VGS=10V
·100avalanchetested
·MinimumLot-to-Lotvariationsforrobustdevice
performanceandreliableoperation
DESCRIPTION
·motordrive,DC-DCc
    ISCInchange Semiconductor Company Limited
    無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司
    

    FQAF70N10
    100VN-ChannelMOSFET
    
GeneralDescription
TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.
Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths
    FairchildFairchild Semiconductor
    仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司
    

    FQB70N10
    100VN-ChannelMOSFET
    
GeneralDescription
TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.
Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths
    FairchildFairchild Semiconductor
    仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司
    

    FQB70N10
    iscN-ChannelMOSFETTransistor
    
FEATURES
·DrainCurrent-ID=57A@TC=25℃
·DrainSourceVoltage-VDSS=100V(Min)
·StaticDrain-SourceOn-Resistance
-RDS(on)=0.023Ω(Max)@VGS=10V
DESCRIPTION
·Motordrive,DC-DCconverter,powerswitch
andsolenoiddrive.
    ISCInchange Semiconductor Company Limited
    無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司
    

    FQH70N10
    iscN-ChannelMOSFETTransistor
    
FEATURES
·DrainCurrent-ID=48A@TC=25℃
·DrainSourceVoltage-VDSS=100V(Min)
·StaticDrain-SourceOn-Resistance
-RDS(on)=0.039Ω(Max)@VGS=10V
DESCRIPTION
·Motordrive,DC-DCconverter,powerswitch
andsolenoiddrive.
    ISCInchange Semiconductor Company Limited
    無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司
    

    
            
    
		
    
            
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    FSC
    		

    23+
    		

    TO-220
    		

    8890
    		

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    FSC
    		

    2020+
    		

    TO220
    		

    5000
    		

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    INFINE
    		

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    6430
    		

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    23+
    		

    TO-251
    		

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    TO-251
    		

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    TO3P
    		

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    YXYBDT/一芯源
    		

    20+21+
    		

    TO-3P
    		

    25
    		

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    INFINEON
    		

    1844+
    		

    TO-263
    		

    6852
    		

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            更新時(shí)間2025-4-6 15:36:00
        
    
        
    
          
    
            
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