首頁 >70P246A999BYGI>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
70P246A999BYGI | VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IDT, Integrated Device Technol |
21+ |
48-TFBGA |
5280 |
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠信經(jīng)營(yíng) |
詢價(jià) | ||
IDT, Integrated Device Technol |
21+ |
100-CABGA(6x6) |
56200 |
一級(jí)代理/放心采購 |
詢價(jià) | ||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物 |
詢價(jià) | ||
RENESAS(瑞薩)/IDT |
2117+ |
CABGA-100(6x6) |
315000 |
90個(gè)/托盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng) |
詢價(jià) | ||
IDT |
20+ |
BGA-100 |
90 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
RENESAS(瑞薩電子) |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價(jià) | ||
IDT |
22+ |
NA |
1186 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
Integrated Device Technology |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
RENESAS(瑞薩)/IDT |
23+ |
CABGA100(6x6) |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
24+ |
N/A |
56000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) |
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