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70T651

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T6519S

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T651S10BC

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T651S10BC8

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T651S10BCI

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T651S10BCI8

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T651S10BF

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T651S10BF8

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T651S10BFG

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T651S10BFG8

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T651S10BFGI

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T651S10BFGI8

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T651S10BFI

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T651S10BFI8

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T651S12BC

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T651S12BC8

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T651S12BCI

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T651S12BCI8

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T651S12BF

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T651S12BF8

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT/RENESAS
22+
BC256, BF208
24500
瑞薩全系列在售
 詢價
IDT
23+
256-LBG
10019
專做原裝正品,假一罰百!
 詢價
IDT
24+
SMD
324554
原裝進口現(xiàn)貨
 詢價
IDT, Integrated Device Technol
21+
165-LBGA
5280
進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營
 詢價
IDT, Integrated Device Technol
24+
208-PQFP(28x28)
56200
一級代理/放心采購
 詢價
RENESAS(瑞薩)/IDT
1921+
CABGA-208(15x15)
3575
向鴻倉庫現(xiàn)貨,優(yōu)勢絕對的原裝!
 詢價
IDT
1931+
N/A
1186
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
RENESAS(瑞薩)/IDT
2117+
CABGA-256(17x17)
315000
6個/托盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
 詢價
IDT
20+
BGA-256
1000
就找我吧!--邀您體驗愉快問購元件!
 詢價
Renesas
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
 詢價
更多70T651供應(yīng)商 更新時間2025-1-17 11:00:00

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