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71T75602S150BG

512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75602S150BG

2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

IDT

Integrated Device Technology, Inc.

71T75602S150BG

包裝：托盤 封裝/外殼：119-BGA 類別：集成電路（IC） 存儲器 描述：IC SRAM 18MBIT PARALLEL 119PBGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71T75602S150BG8

512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75602S150BGG

512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75602S150BGG8

512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75602S150BGGI

512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75602S150BGGI8

512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75602S150BGI

512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75602S150BGI8

512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75602S150BG8

2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

IDT

Integrated Device Technology, Inc.

71T75602S150BGG

2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

IDT

Integrated Device Technology, Inc.

71T75602S150BGG8

2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

IDT

Integrated Device Technology, Inc.

71T75602S150BGGI

2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

IDT

Integrated Device Technology, Inc.

71T75602S150BGGI8

2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

IDT

Integrated Device Technology, Inc.

71T75602S150BGI

2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

IDT

Integrated Device Technology, Inc.

71T75602S150BGI8

2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

IDT

Integrated Device Technology, Inc.

71T75602S150BGG

包裝：托盤 封裝/外殼：119-BGA 類別：集成電路（IC） 存儲器 描述：IC SRAM 18MBIT PARALLEL 119PBGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71T75602S150BGG8

包裝：托盤 封裝/外殼：119-BGA 類別：集成電路（IC） 存儲器 描述：IC SRAM 18MBIT PARALLEL 119PBGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

產(chǎn)品屬性

  • 產(chǎn)品編號：

    71T75602S150BG

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲器

  • 包裝：

    托盤

  • 存儲器類型：

    易失

  • 存儲器格式：

    SRAM

  • 技術(shù)：

    SRAM - 同步，SDR（ZBT）

  • 存儲容量：

    18Mb（512K x 36）

  • 存儲器接口：

    并聯(lián)

  • 電壓 - 供電：

    2.375V ~ 2.625V

  • 工作溫度：

    0°C ~ 70°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    119-BGA

  • 供應(yīng)商器件封裝：

    119-PBGA（14x22）

  • 描述：

    IC SRAM 18MBIT PARALLEL 119PBGA

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT, Integrated Device Technol
21+
165-TBGA
5280
進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營
 詢價
IDT, Integrated Device Technol
24+
119-PBGA(14x22)
56200
一級代理/放心采購
 詢價
RENESAS(瑞薩)/IDT
1921+
PBGA-119(14x22)
3575
向鴻倉庫現(xiàn)貨,優(yōu)勢絕對的原裝!
 詢價
IDT
1931+
N/A
1186
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
RENESAS(瑞薩)/IDT
2117+
PBGA-119(14x22)
315000
84個/托盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長
 詢價
IDT
20+
BGA-119
84
就找我吧!--邀您體驗愉快問購元件!
 詢價
RENESAS(瑞薩)/IDT
2021+
PBGA-119(14x22)
499
詢價
RENESAS(瑞薩電子)
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
IDT
22+
NA
1186
加我QQ或微信咨詢更多詳細信息,
 詢價
Integrated Device Technology
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
更多71T75602S150BG供應(yīng)商 更新時間2025-1-1 13:02:00

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