Features

◆ 512K x 36, 1M x 18 memory configurations

◆ Supports high performance system speed - 200 MHz

(3.2 ns Clock-to-Data Access)

◆ ZBTTM Feature - No dead cycles between write and read

cycles

◆ Internally synchronized output buffer enable eliminates the

need to control OE

◆ Single R/W (READ/WRITE) control pin

◆ Positive clock-edge triggered address, data, and control

signal registers for fully pipelined applications

◆ 4-word burst capability (interleaved or linear)

◆ Individual byte write (BW1 - BW4) control (May tie active)

◆ Three chip enables for simple depth expansion

◆ 2.5V power supply (±5)

◆ 2.5V I/O Supply (VDDQ)

◆ Power down controlled by ZZ input

◆ Boundary Scan JTAG Interface (IEEE 1149.1 Compliant)

◆ Packaged in a JEDEC standard 100-pin plastic thin quad

flatpack (TQFP), 119 ball grid array (BGA)

◆ Industrial temperature range (–40°C to +85°C) is available

for selected speeds

◆ Green parts available, see ordering information

71T75602S150BGG屬于集成電路（IC） > 存儲(chǔ)器。瑞薩科技有限公司制造生產(chǎn)的71T75602S150BGG存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。