首頁 >71V124SA12TYI>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDT Integrated Device Technology, Inc. | IDT |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IDT |
23+ |
SOJ |
8890 |
價(jià)格優(yōu)勢(shì)、原裝現(xiàn)貨、客戶至上。歡迎廣大客戶來電查詢 |
詢價(jià) | ||
IDT, |
21+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
詢價(jià) | |||
INTEGRATED DEVICE TECHNOLOGY |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
24+ |
N/A |
64000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
IDT |
22+ |
SOJ |
1500 |
強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢! |
詢價(jià) | ||
IDT |
22+ |
SOJ |
50000 |
只做原裝正品,假一罰十,歡迎咨詢 |
詢價(jià) | ||
IDT |
2018+ |
26976 |
代理原裝現(xiàn)貨/特價(jià)熱賣! |
詢價(jià) | |||
Integrated Device Technology ( |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價(jià) | |||
IDT, Integrated Device Technol |
24+ |
32-SOJ |
56200 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | ||
RENESAS(瑞薩)/IDT |
1921+ |
SOJ-32 |
3575 |
向鴻倉庫現(xiàn)貨,優(yōu)勢(shì)絕對(duì)的原裝! |
詢價(jià) |
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