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71V3556SA133BQGI

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA133BQGI

包裝:卷帶(TR) 封裝/外殼:165-TBGA 類(lèi)別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 4.5MBIT PAR 165CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V3556SA133BQGI8

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA133BQGI8

包裝:卷帶(TR) 封裝/外殼:165-TBGA 類(lèi)別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 4.5MBIT PAR 165CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V3556SA133BG

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA133BGG

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA133BGGI

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA133BGI

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA133BQ

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA133BQG

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA133BQI

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    71V3556SA133BQGI

  • 制造商:

    Renesas Electronics America Inc

  • 類(lèi)別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    卷帶(TR)

  • 存儲(chǔ)器類(lèi)型:

    易失

  • 存儲(chǔ)器格式:

    SRAM

  • 技術(shù):

    SRAM - 同步,SDR(ZBT)

  • 存儲(chǔ)容量:

    4.5Mb(128K x 36)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 電壓 - 供電:

    3.135V ~ 3.465V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類(lèi)型:

    表面貼裝型

  • 封裝/外殼:

    165-TBGA

  • 供應(yīng)商器件封裝:

    165-CABGA(13x15)

  • 描述:

    IC SRAM 4.5MBIT PAR 165CABGA

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IDT, Integrated Device Technol
21+
48-TFBGA
5280
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
詢(xún)價(jià)
IDT, Integrated Device Technol
24+
165-CABGA(13x15)
56200
一級(jí)代理/放心采購(gòu)
詢(xún)價(jià)
IDT
1931+
N/A
1186
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
詢(xún)價(jià)
IDT
20+
BGA-165
136
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
詢(xún)價(jià)
RENESAS(瑞薩電子)
22+
NA
500000
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂(yōu)
詢(xún)價(jià)
IDT
22+
NA
1186
加我QQ或微信咨詢(xún)更多詳細(xì)信息,
詢(xún)價(jià)
24+
N/A
62000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
詢(xún)價(jià)
Renesas Electronics Corporatio
23+/24+
165-TBGA
8600
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨
詢(xún)價(jià)
Renesas Electronics America In
24+
165-TBGA
9350
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
詢(xún)價(jià)
RENESAS(瑞薩)/IDT
1921+
CABGA-165(13x15)
3575
向鴻倉(cāng)庫(kù)現(xiàn)貨,優(yōu)勢(shì)絕對(duì)的原裝!
詢(xún)價(jià)
更多71V3556SA133BQGI供應(yīng)商 更新時(shí)間2024-12-29 13:01:00