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71V35761SA166BQGI

128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V35761SA166BQGI

包裝:托盤 封裝/外殼:165-TBGA 類別:集成電路(IC) 存儲器 描述:IC SRAM 4.5MBIT PAR 165CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V35761SA166BQGI8

128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V35761SA166BQGI8

包裝:托盤 封裝/外殼:165-TBGA 類別:集成電路(IC) 存儲器 描述:IC SRAM 4.5MBIT PAR 165CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

IDT71V35761SA166BG

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761SA166BGG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761SA166BGGI

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761SA166BGI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761SA166BQ

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761SA166BQG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761SA166BQGI

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761SA166BQI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761SA166PF

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761SA166PFG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761SA166PFGI

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761SA166PFI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號:

    71V35761SA166BQGI

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    托盤

  • 存儲器類型:

    易失

  • 存儲器格式:

    SRAM

  • 技術:

    SRAM - 同步,SDR

  • 存儲容量:

    4.5Mb(128K x 36)

  • 存儲器接口:

    并聯(lián)

  • 電壓 - 供電:

    3.135V ~ 3.465V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    165-TBGA

  • 供應商器件封裝:

    165-CABGA(13x15)

  • 描述:

    IC SRAM 4.5MBIT PAR 165CABGA

供應商型號品牌批號封裝庫存備注價格
RENESAS(瑞薩)/IDT
2022+原裝正品
CABGA-165(13x15)
18000
支持工廠BOM表配單 公司只做原裝正品貨
詢價
IDT
23+
NA
830
專做原裝正品,假一罰百!
詢價
IDT, Integrated Device Technol
21+
-
5280
進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營
詢價
IDT, Integrated Device Technol
24+
165-CABGA(13x15)
56200
一級代理/放心采購
詢價
IDT
1931+
N/A
1186
加我qq或微信,了解更多詳細信息,體驗一站式購物
詢價
RENESAS(瑞薩)/IDT
2117+
CABGA-165(13x15)
315000
136個/托盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長
詢價
IDT
20+
BGA-165
136
就找我吧!--邀您體驗愉快問購元件!
詢價
IDT,
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
詢價
RENESAS(瑞薩)/IDT
2021+
CABGA-165(13x15)
499
詢價
IDT
22+
NA
1186
加我QQ或微信咨詢更多詳細信息,
詢價
更多71V35761SA166BQGI供應商 更新時間2024-12-30 15:00:00