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首頁 >71V424S12PHI>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
71V424S12YG	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424S12YG	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
71V424S12YGI	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424S12YGI	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S12PH	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S12PHG	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S12PHGI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S12PHI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S12Y	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S12YG	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S12YGI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S12YI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT

詳細(xì)參數(shù)

型號：
71V424S12PHI
制造商：
Integrated Device Technology Inc
功能描述：
SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 12ns 44-Pin TSOP-II Tray
功能描述：
SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 12ns 44-Pin TSOP-II Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
上海市鑫鴻達(dá)電子	71V424S12YG	Integrated Device Technology (	2022+		1	全新原裝貨期兩周	詢價
瀚佳科技(深圳)有限公司	71V424S12YG	IDT, Integrated Device Technol	24+	36-SOJ	56200	一級代理/放心采購	詢價
深圳市芯祺盛科技有限公司	71V424S12YG	RENESAS(瑞薩)/IDT	1921+	SOJ-36	3575	向鴻倉庫現(xiàn)貨,優(yōu)勢絕對的原裝!	詢價
深圳市艾宇欣科技有限公司	71V424S12YG	IDT	1931+	N/A	1186	加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物	詢價
艾睿國際（香港）有限公司	71V424S12YG	RENESAS(瑞薩)/IDT	2117+	SOJ-36	315000	20個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期	詢價
深圳市科雨電子有限公司	71V424S12YG	IDT	20+	SOP-36	160	就找我吧!--邀您體驗愉快問購元件!	詢價
深圳市博正芯科技有限公司	71V424S12YG	IDT, Integrated Device Technol	21+	NA	11200	正品專賣,進口原裝深圳現(xiàn)貨	詢價
深圳市冠億通科技有限公司	71V424S12YG	IDT,	21+		25000	原廠原包深圳現(xiàn)貨主打品牌假一賠百可開票!	詢價
訊運(深圳/上海)電子有限公司	71V424S12YG	RENESAS(瑞薩)/IDT	2021+	SOJ-36	499		詢價
萬三科技(深圳)有限公司	71V424S12YG	RENESAS(瑞薩電子)	22+	NA	500000	萬三科技,秉承原裝,購芯無憂	詢價

更多71V424S12PHI供應(yīng)商更新時間2025-1-16 9:50:00

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