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首頁 >IDT71V424S12YG>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IDT71V424S12YG	文件：19.28 Kbytes Page：9 Pages	3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S12YGI	文件：19.28 Kbytes Page：9 Pages	3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
71V424S12PHG	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424S12PHG	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
71V424S12PHGI	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424S12PHGI	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
71V424S12YG	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
71V424S12YG	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424S12YGI	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424S12YGI	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S12PH	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S12PHG	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S12PHGI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S12PHI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S12Y	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S12YI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT

詳細參數(shù)

型號：
IDT71V424S12YG
功能描述：
IC SRAM 4MBIT 12NS 36SOJ
RoHS：
是
類別：
集成電路(IC) >> 存儲器
系列：
-
標(biāo)準(zhǔn)包裝：
72
系列：
- 格式 -
存儲器：
RAM
存儲器類型：
SRAM - 同步
存儲容量：
4.5M（256K x 18）
速度：
133MHz
接口：
并聯(lián)
電源電壓：
3.135 V ~ 3.465 V
工作溫度：
0°C ~ 70°C
封裝/外殼：
100-LQFP
供應(yīng)商設(shè)備封裝：
100-TQFP（14x20）
包裝：
托盤

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
京海半導(dǎo)體(深圳)有限公司	IDT71V424S12YG	IDT	23+	SOJ36	98900	原廠原裝正品現(xiàn)貨!!	詢價
深圳市益百分電子有限公司	IDT71V424S12YG	IDT	05+	SOJ36	3560	全新原裝進口自己庫存優(yōu)勢	詢價
深圳市毅創(chuàng)騰電子科技有限公司	IDT71V424S12YG	IDT	23+	36-SOJ	73390	專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!	詢價
深圳市科恒偉業(yè)電子有限公司	IDT71V424S12YG	IDT	2016+	SOJ36	6528	只做進口原裝現(xiàn)貨!或訂貨,假一賠十!	詢價
上海專毅電子科技有限公司	IDT71V424S12YG	IDT	17+	SOJ36	9988	只做原裝進口,自己庫存	詢價
深圳市永貝爾科技有限公司	IDT71V424S12YG	IDT	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳市昊創(chuàng)電子有限公司	IDT71V424S12YG	IDT	11+	SOJ36	1500	全新原裝	詢價
深圳市華睿芯科技有限公司	IDT71V424S12YG	IDT	23+	SOJ	20000	原廠原裝正品現(xiàn)貨	詢價
深圳市維爾達電子有限公司	IDT71V424S12YG	IDT	2023+	SOJ	80000	一級代理/分銷渠道價格優(yōu)勢十年芯程一路只做原裝正品	詢價
深圳市興燦科技有限公司	IDT71V424S12YG	IDT	24+	36SOJ	3325	原裝現(xiàn)貨	詢價

更多IDT71V424S12YG供應(yīng)商更新時間2025-1-2 17:17:00

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