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首頁 >71V65603S150BGG>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
71V65603S150BGG	文件：313.82 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs ZBT? Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S150BGG	文件：100 bytes Page：1 Pages	包裝：托盤封裝/外殼：119-BGA 類別：集成電路（IC）存儲器描述：IC SRAM 9MBIT PARALLEL 119PBGA	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
71V65603S150BGG8	文件：313.82 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs ZBT? Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S150BGGI	文件：313.82 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs ZBT? Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S150BGGI8	文件：313.82 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs ZBT? Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S150BGGI	文件：100 bytes Page：1 Pages	包裝：卷帶（TR）封裝/外殼：119-BGA 類別：集成電路（IC）存儲器描述：IC SRAM 9MBIT PARALLEL 119PBGA	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
71V65603S150BGGI8	文件：100 bytes Page：1 Pages	包裝：卷帶（TR）封裝/外殼：119-BGA 類別：集成電路（IC）存儲器描述：IC SRAM 9MBIT PARALLEL 119PBGA	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
71V65603S150BQ	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S150BQG	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S150BQGI	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S150BQI	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S150PFG	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S150PFGI	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
IDT71V65603S150BG	文件：496.4 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDT Integrated Device Technology, Inc.	IDT
IDT71V65603S150BGI	文件：496.4 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDT Integrated Device Technology, Inc.	IDT
IDT71V65603S150BQ	文件：496.4 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDT Integrated Device Technology, Inc.	IDT
IDT71V65603S150BQI	文件：496.4 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDT Integrated Device Technology, Inc.	IDT
IDT71V65603S150PF	文件：496.4 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDT Integrated Device Technology, Inc.	IDT
IDT71V65603S150PFI	文件：496.4 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDT Integrated Device Technology, Inc.	IDT

產(chǎn)品屬性

產(chǎn)品編號：
71V65603S150BGG
制造商：
Renesas Electronics America Inc
類別：
集成電路（IC） > 存儲器
包裝：
托盤
存儲器類型：
易失
存儲器格式：
SRAM
技術(shù)：
SRAM - 同步，SDR（ZBT）
存儲容量：
9Mb（256K x 36）
存儲器接口：
并聯(lián)
電壓 - 供電：
3.135V ~ 3.465V
工作溫度：
0°C ~ 70°C（TA）
安裝類型：
表面貼裝型
封裝/外殼：
119-BGA
供應商器件封裝：
119-PBGA（14x22）
描述：
IC SRAM 9MBIT PARALLEL 119PBGA

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市斌騰達科技有限公司	71V65603S150BGG	IDT, Integrated Device Technol	21+	64-LBGA	5280	進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營	詢價
瀚佳科技(深圳)有限公司	71V65603S150BGG	IDT, Integrated Device Technol	24+	119-PBGA(14x22)	56200	一級代理/放心采購	詢價
深圳市艾宇欣科技有限公司	71V65603S150BGG	IDT	1931+	N/A	1186	加我qq或微信，了解更多詳細信息,體驗一站式購物	詢價
艾睿國際（香港）有限公司	71V65603S150BGG	RENESAS(瑞薩)/IDT	2117+	PBGA-119(14x22)	315000	84個/托盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長	詢價
深圳市科雨電子有限公司	71V65603S150BGG	IDT	20+	BGA-119	84	就找我吧!--邀您體驗愉快問購元件!	詢價
訊運(深圳/上海)電子有限公司	71V65603S150BGG	RENESAS(瑞薩)/IDT	2021+	PBGA-119(14x22)	499		詢價
萬三科技(深圳)有限公司	71V65603S150BGG	RENESAS(瑞薩電子)	22+	NA	500000	萬三科技,秉承原裝,購芯無憂	詢價
深圳市易訊博科技有限公司	71V65603S150BGG	IDT	22+	NA	1186	加我QQ或微信咨詢更多詳細信息,	詢價
深圳市鵬順微電子科技有限公司	71V65603S150BGG	Integrated Device Technology	2022+	原廠原包裝	8600	全新原裝支持表配單中國著名電子元器件獨立分銷	詢價
深圳市高捷芯城科技有限公司	71V65603S150BGG	RENESAS(瑞薩)/IDT	23+	PBGA119(14x22)	7350	現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術(shù)支持!!!	詢價

更多71V65603S150BGG供應商更新時間2025-1-3 9:15:00

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